Cree/Wolfspeed GTVA220701FA-V1-R2
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- GTVA220701FA-V1-R2
- Cree/Wolfspeed
- GAN SIC
- Transistors - FETs, MOSFETs - RF
- GTVA220701FA-V1-R2 Лист данных
- -
- Tape & Reel (TR)
-
Lead free / RoHS Compliant - 2150
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number GTVA220701FA-V1-R2 |
| Category Transistors - FETs, MOSFETs - RF |
| Manufacturer Cree/Wolfspeed |
| Description GAN SIC |
| Package Tape & Reel (TR) |
| Series - |
| Package / Case - |
| Supplier Device Package - |
| Frequency - |
| Gain - |
| Noise Figure - |
| Power - Output - |
| Transistor Type - |
| Voltage - Test - |
| Current - Test - |
| Voltage - Rated - |
| Current Rating (Amps) - |
| Package_case - |
GTVA220701FA-V1-R2 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о GTVA220701FA-V1-R2 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
GTVA220701FA-V1-R2 сопутствующие товары
Комментарии
Cree/Wolfspeed
PXAC260602FC-V1-R0
IC AMP RF LDMOS H-37248-4
PTFB241402F-V1-R0
IC AMP RF LDMOS H-37248-4
PTFB241402FC-V1-R250
IC AMP RF LDMOS H-37248-4
PXAE263708NB-V1-R2
IC AMP RF LDMOS H-37248-4
PXAE213708NB-V1-R2
IC AMP RF LDMOS H-37248-4
PXFC191507FC-V1-R0
IC AMP RF LDMOS H-37248-4
PTRA083818NF-V1-R5
IC AMP RF LDMOS H-37248-4
PTRA093818NF-V1-R5
IC AMP RF LDMOS H-37248-4
NPN Silicon Transistor S8050 - Datasheet, Application Specifications, Pinout and Equivalent Replacements
NPN Silicon Transistor S8050 - Datasheet, Application Specifications, Pinout and Equivalent Replacements
S8050 is an NPN bipolar transistor. So when the base pin is connected to ground, the collector and emitter will remain open (reverse biased) and when a signal is supplied to the base pin, the collector and emitter will be closed (forward biased). It is commonly used in amplification and switching applications and is the perfect transistor to perform small and versatile tasks in electronic
What are IGBTs? How to improve the thermal performance design of IGBT on PCB
What are IGBTs? How to improve the thermal performance design of IGBT on PCB
IGBT - Insulated Gate Bipolar Transistor. An IGBT is a power semiconductor device used in high voltage and high current applications. They are mainly used as switches in power electronic circuits. It's worth noting in the name IGBT, which has an insulated gate like a FET and a bipolar transistor like a BJT. The main reason for this is that an IGBT is indeed a device that combines the advantages of both transistors
The most complete introduction to IGBT modules in 2023
IGBTs are used in many applications, such as motor drives, industrial control, power transmission, renewable energy, and electric transportation, mainly because IGBTs provide a convenient and reliable power-switching solution for handling high-power and high-voltage applications.
1n5819 Diode (Schottky Rectifier) Pinout, Alternatives, Specifications, Datasheet, Price and Applications
1N5819 Schottky Diode Description:
1N5819 is a commonly used Schottky diode. A Schottky diode is a diode with special properties, its main features are a small forward voltage drop (typically 0.2-0.3V) and a fast reverse recovery time.
