GPA804 C0G

Taiwan Semiconductor Corporation GPA804 C0G

Изображение только для справки, пожалуйста, обратитесь к спецификации продукта

  • GPA804 C0G
  • Taiwan Semiconductor Corporation
  • DIODE GEN PURP 400V 8A TO220AC
  • Diodes - Rectifiers - Single
  • GPA804 C0G Лист данных
  • TO-220-2
  • Tube
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/GPA804-C0GLead free / RoHS Compliant
  • 4298
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
GPA804 C0G
Category
Diodes - Rectifiers - Single
Manufacturer
Taiwan Semiconductor Corporation
Description
DIODE GEN PURP 400V 8A TO220AC
Package
Tube
Series
-
Mounting Type
Through Hole
Package / Case
TO-220-2
Supplier Device Package
TO-220AC
Diode Type
Standard
Current - Average Rectified (Io)
8A
Voltage - Forward (Vf) (Max) @ If
1.1 V @ 8 A
Current - Reverse Leakage @ Vr
5 µA @ 400 V
Capacitance @ Vr, F
50pF @ 4V, 1MHz
Voltage - DC Reverse (Vr) (Max)
400 V
Speed
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)
-
Operating Temperature - Junction
-55°C ~ 150°C
Package_case
TO-220-2

GPA804 C0G Гарантии

jinfftry-guarantee1,https://www.jinftry.ru/product_detail/GPA804-C0G

jinfftry-guarantee2,https://www.jinftry.ru/product_detail/GPA804-C0G

jinfftry-guarantee3,https://www.jinftry.ru/product_detail/GPA804-C0G

• Ответьте оперативно

• Гарантированное качество

• Глобальный доступ

• Конкурентоспособная рыночная цена

• Универсальные услуги цепочки поставок

Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!

У вас есть вопросы о GPA804 C0G ?
Не стесняйтесь связаться с нами:

+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )

Комментарии

Оставьте свой комментарий

Taiwan Semiconductor Corporation

GPA802 C0G,https://www.jinftry.ru/product_detail/GPA804-C0G
GPA802 C0G

DIODE GEN PURP 100V 8A TO220AC

GPA801 C0G,https://www.jinftry.ru/product_detail/GPA804-C0G
GPA801 C0G

DIODE GEN PURP 100V 8A TO220AC

MBR745 C0G,https://www.jinftry.ru/product_detail/GPA804-C0G
MBR745 C0G

DIODE GEN PURP 100V 8A TO220AC

MBR735 C0G,https://www.jinftry.ru/product_detail/GPA804-C0G
MBR735 C0G

DIODE GEN PURP 100V 8A TO220AC

UGF10J C0G,https://www.jinftry.ru/product_detail/GPA804-C0G
UGF10J C0G

DIODE GEN PURP 100V 8A TO220AC

MBRS16150HMNG,https://www.jinftry.ru/product_detail/GPA804-C0G
MBRS16150HMNG

DIODE GEN PURP 100V 8A TO220AC

SK20H45 R0G,https://www.jinftry.ru/product_detail/GPA804-C0G
SK20H45 R0G

DIODE GEN PURP 100V 8A TO220AC

MUR8L60 C0G,https://www.jinftry.ru/product_detail/GPA804-C0G
MUR8L60 C0G

DIODE GEN PURP 100V 8A TO220AC

An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications

An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the advantages of MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and BJT (Bipolar Transistor). It is widely used in the field of power electronics and used in switching power supplies. , motor drive, inverter and other applications. IGBT module CM1000DU-34NF The IGBT module is a highly efficient and comp

BC547/BC548 transistor pin configuration, data sheet and application characteristics

BC547/BC548 transistor pin configuration, data sheet and application characteristics What is a BC547 transistor? BC547 is a common NPN bipolar transistor, so it is widely used in electronic circuits when the base pin is connected to ground, the collector and emitter will remain open circuit (reverse biased), while when the base pin is grounded When a signal is provided, the collector and emitter are turned off (forward biased).

What are IGBTs? How to improve the thermal performance design of IGBT on PCB

What are IGBTs? How to improve the thermal performance design of IGBT on PCB IGBT - Insulated Gate Bipolar Transistor. An IGBT is a power semiconductor device used in high voltage and high current applications. They are mainly used as switches in power electronic circuits. It's worth noting in the name IGBT, which has an insulated gate like a FET and a bipolar transistor like a BJT. The main reason for this is that an IGBT is indeed a device that combines the advantages of both transistors

The development trend of IGBT (insulated gate bipolar transistor) manufacturers in recent years

PS22A78-E Description:DIPIPMs are intelligent power modules that integrate power devices, drivers, and protection circuitry. Design time is reduced by the use of application-specific HVICs and value-added features such as linear temperature feed-back. Overall efficiency and reliability are increase ed by the use of full gate CSTBT technology and low thermal impedance. Features:   Low-loss, Full Gate CSTBT IGBTs Single Power Supply   Integrated HVICs   Direct Connection to CPUApplications:
Индекс продукции
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
0
1
2
3
4
5
6
7
8
9
Shopping Cart Tel: +86-755-82518276 Email: sales@jinftry.com Skype: +8615019224070, annies65, +8615118125813 QQ: 568248857, 827259012, 316249462 Mobile: +8615019224070, +8615118118839, +8615118125813 WeChat: Send Message
TOP