GI856/MR856

NTE Electronics, Inc GI856/MR856

Изображение только для справки, пожалуйста, обратитесь к спецификации продукта

  • GI856/MR856
  • NTE Electronics, Inc
  • R-600 PRV 3A
  • Diodes - Rectifiers - Single
  • GI856/MR856 Лист данных
  • DO-201AD, Axial
  • Bag
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/GI856-MR856Lead free / RoHS Compliant
  • 1075
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
GI856/MR856
Category
Diodes - Rectifiers - Single
Manufacturer
NTE Electronics, Inc
Description
R-600 PRV 3A
Package
Bag
Series
-
Mounting Type
Through Hole
Package / Case
DO-201AD, Axial
Supplier Device Package
DO-201AD
Diode Type
Standard
Current - Average Rectified (Io)
3A
Voltage - Forward (Vf) (Max) @ If
1.25 V @ 3 A
Current - Reverse Leakage @ Vr
10 µA @ 600 V
Capacitance @ Vr, F
28pF @ 4V, 1MHz
Voltage - DC Reverse (Vr) (Max)
600 V
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
200 ns
Operating Temperature - Junction
-50°C ~ 150°C
Package_case
DO-201AD, Axial

GI856/MR856 Гарантии

jinfftry-guarantee1,https://www.jinftry.ru/product_detail/GI856-MR856

jinfftry-guarantee2,https://www.jinftry.ru/product_detail/GI856-MR856

jinfftry-guarantee3,https://www.jinftry.ru/product_detail/GI856-MR856

• Ответьте оперативно

• Гарантированное качество

• Глобальный доступ

• Конкурентоспособная рыночная цена

• Универсальные услуги цепочки поставок

Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!

У вас есть вопросы о GI856/MR856 ?
Не стесняйтесь связаться с нами:

+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )

Комментарии

Оставьте свой комментарий

NTE Electronics, Inc

NTE5801,https://www.jinftry.ru/product_detail/GI856-MR856
NTE5801

R-100 PRV 3A AXIAL LEAD

GI858/MR858,https://www.jinftry.ru/product_detail/GI856-MR856
GI858/MR858

R-100 PRV 3A AXIAL LEAD

GI752,https://www.jinftry.ru/product_detail/GI856-MR856
GI752

R-100 PRV 3A AXIAL LEAD

NTE638,https://www.jinftry.ru/product_detail/GI856-MR856
NTE638

R-100 PRV 3A AXIAL LEAD

NTE6082,https://www.jinftry.ru/product_detail/GI856-MR856
NTE6082

R-100 PRV 3A AXIAL LEAD

NTE5830,https://www.jinftry.ru/product_detail/GI856-MR856
NTE5830

R-100 PRV 3A AXIAL LEAD

NTE5832,https://www.jinftry.ru/product_detail/GI856-MR856
NTE5832

R-100 PRV 3A AXIAL LEAD

NTE5834,https://www.jinftry.ru/product_detail/GI856-MR856
NTE5834

R-100 PRV 3A AXIAL LEAD

What is a power module

What is a power module Features of the power module Power drive module role What are the power drive modules ,Provide you with power drive modules,A Power Module is a highly integrated electronic device that controls and converts electrical energy. It usually includes multiple power semiconductor devices (such as IGBTs, MOSFETs, diodes, etc.),

Introduction to Semiconductor Discrete Devices

Introduction to Semiconductor Discrete Devices Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices. Introduction to Semiconductor Discrete Devices Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe

What is a bipolar transistor and what is its operating mode

What is a bipolar transistor How bipolar transistors work Bipolar junction transistor four modes of operation Bipolar transistor development applications What is a bipolar transistor

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems. Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
Индекс продукции
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
0
1
2
3
4
5
6
7
8
9
Shopping Cart Tel: +86-755-82518276 Email: sales@jinftry.com Skype: +8615019224070, annies65, +8615118125813 QQ: 568248857, 827259012, 316249462 Mobile: +8615019224070, +8615118118839, +8615118125813 WeChat: Send Message
TOP