GHXS045A120S-D1

Global Power Technologies Group GHXS045A120S-D1

Изображение только для справки, пожалуйста, обратитесь к спецификации продукта

  • GHXS045A120S-D1
  • Global Power Technologies Group
  • MOD SBD BRIDGE 1200V 45A SOT227
  • Diodes - Bridge Rectifiers
  • GHXS045A120S-D1 Лист данных
  • SOT-227-4, miniBLOC
  • SOT-227-4, miniBLOC
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/GHXS045A120S-D1Lead free / RoHS Compliant
  • 7848
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
GHXS045A120S-D1
Category
Diodes - Bridge Rectifiers
Manufacturer
Global Power Technologies Group
Description
MOD SBD BRIDGE 1200V 45A SOT227
Package
SOT-227-4, miniBLOC
Series
-
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Chassis Mount
Package / Case
SOT-227-4, miniBLOC
Supplier Device Package
SOT-227
Technology
Silicon Carbide Schottky
Diode Type
Single Phase
Voltage - Peak Reverse (Max)
1.2kV
Current - Average Rectified (Io)
45A
Voltage - Forward (Vf) (Max) @ If
1.7V @ 45A
Current - Reverse Leakage @ Vr
300µA @ 1200V
Package_case
SOT-227-4, miniBLOC

GHXS045A120S-D1 Гарантии

jinfftry-guarantee1,https://www.jinftry.ru/product_detail/GHXS045A120S-D1

jinfftry-guarantee2,https://www.jinftry.ru/product_detail/GHXS045A120S-D1

jinfftry-guarantee3,https://www.jinftry.ru/product_detail/GHXS045A120S-D1

• Ответьте оперативно

• Гарантированное качество

• Глобальный доступ

• Конкурентоспособная рыночная цена

• Универсальные услуги цепочки поставок

Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!

У вас есть вопросы о GHXS045A120S-D1 ?
Не стесняйтесь связаться с нами:

+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )

Комментарии

Оставьте свой комментарий

Global Power Technologies Group

GHXS030A060S-D1,https://www.jinftry.ru/product_detail/GHXS045A120S-D1
GHXS030A060S-D1

MOD SBD BRIDGE 600V 30A SOT227

GHXS015A120S-D1,https://www.jinftry.ru/product_detail/GHXS045A120S-D1
GHXS015A120S-D1

MOD SBD BRIDGE 600V 30A SOT227

GHXS015A120S-D1E,https://www.jinftry.ru/product_detail/GHXS045A120S-D1
GHXS015A120S-D1E

MOD SBD BRIDGE 600V 30A SOT227

GHXS020A060S-D1E,https://www.jinftry.ru/product_detail/GHXS045A120S-D1
GHXS020A060S-D1E

MOD SBD BRIDGE 600V 30A SOT227

GHXS020A060S-D1,https://www.jinftry.ru/product_detail/GHXS045A120S-D1
GHXS020A060S-D1

MOD SBD BRIDGE 600V 30A SOT227

GHXS010A060S-D1E,https://www.jinftry.ru/product_detail/GHXS045A120S-D1
GHXS010A060S-D1E

MOD SBD BRIDGE 600V 30A SOT227

GP2D024A060U,https://www.jinftry.ru/product_detail/GHXS045A120S-D1
GP2D024A060U

MOD SBD BRIDGE 600V 30A SOT227

GP2D016A120U,https://www.jinftry.ru/product_detail/GHXS045A120S-D1
GP2D016A120U

MOD SBD BRIDGE 600V 30A SOT227

What is a power module

What is a power module Features of the power module Power drive module role What are the power drive modules ,Provide you with power drive modules,A Power Module is a highly integrated electronic device that controls and converts electrical energy. It usually includes multiple power semiconductor devices (such as IGBTs, MOSFETs, diodes, etc.),

Introduction to Semiconductor Discrete Devices

Introduction to Semiconductor Discrete Devices Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices. Introduction to Semiconductor Discrete Devices Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe

What is a bipolar transistor and what is its operating mode

What is a bipolar transistor How bipolar transistors work Bipolar junction transistor four modes of operation Bipolar transistor development applications What is a bipolar transistor

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems. Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
Индекс продукции
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
0
1
2
3
4
5
6
7
8
9
Shopping Cart Tel: +86-755-82518276 Email: sales@jinftry.com Skype: +8615019224070, annies65, +8615118125813 QQ: 568248857, 827259012, 316249462 Mobile: +8615019224070, +8615118118839, +8615118125813 WeChat: Send Message
TOP