GeneSiC Semiconductor GBPC5001W
- GBPC5001W
- GeneSiC Semiconductor
- BRIDGE RECT 1P 100V 50A GBPC-W
- Diodes - Bridge Rectifiers
- GBPC5001W Лист данных
- 4-Square, GBPC-W
- Bulk
- Lead free / RoHS Compliant
- 4307
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number GBPC5001W |
Category Diodes - Bridge Rectifiers |
Manufacturer GeneSiC Semiconductor |
Description BRIDGE RECT 1P 100V 50A GBPC-W |
Package Bulk |
Series - |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Through Hole |
Package / Case 4-Square, GBPC-W |
Supplier Device Package GBPC-W |
Technology Standard |
Diode Type Single Phase |
Voltage - Peak Reverse (Max) 100 V |
Current - Average Rectified (Io) 50 A |
Voltage - Forward (Vf) (Max) @ If 1.2 V @ 25 A |
Current - Reverse Leakage @ Vr 5 µA @ 100 V |
Package_case 4-Square, GBPC-W |
GBPC5001W Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о GBPC5001W ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
GeneSiC Semiconductor
GBPC5008T
BRIDGE RECT 1PHASE 800V 50A GBPC
GBPC5006T
BRIDGE RECT 1PHASE 800V 50A GBPC
GBPC5004T
BRIDGE RECT 1PHASE 800V 50A GBPC
GBPC5002T
BRIDGE RECT 1PHASE 800V 50A GBPC
GBPC5001T
BRIDGE RECT 1PHASE 800V 50A GBPC
GBPC5010T
BRIDGE RECT 1PHASE 800V 50A GBPC
GBPC50005T
BRIDGE RECT 1PHASE 800V 50A GBPC
M3P75A-40
BRIDGE RECT 1PHASE 800V 50A GBPC
Introduction to Semiconductor Discrete Devices
Introduction to Semiconductor Discrete Devices
Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices.
Introduction to Semiconductor Discrete Devices
Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe
Classification of IGBT modules, difference between application characteristics and MOSFETs
Classification of IGBT modules, difference between application characteristics and MOSFETs
Both MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are commonly used switching devices in power electronics. They each have their own characteristics and application scenarios, the following are their main differences:
The most complete introduction to IGBT modules in 2023
IGBTs are used in many applications, such as motor drives, industrial control, power transmission, renewable energy, and electric transportation, mainly because IGBTs provide a convenient and reliable power-switching solution for handling high-power and high-voltage applications.
ON NTD2955G series packages and features are different
NTD2955 is a P-type MOSFET (Metal Oxide Semiconductor Field Effect Transistor) produced by ON Semiconductor. NTD2955 series models may have some changes, such as NTD2955PT4G, NTD2955T4G, NTD2955T4, NTD2955G, NTD2955-1G, etc. These models basically have the same parameters, but may differ in packaging or other characteristics.