GBPC4010 T0G

Taiwan Semiconductor Corporation GBPC4010 T0G

Изображение только для справки, пожалуйста, обратитесь к спецификации продукта

  • GBPC4010 T0G
  • Taiwan Semiconductor Corporation
  • BRIDGE RECT 1P 1KV 40A GBPC40
  • Diodes - Bridge Rectifiers
  • GBPC4010 T0G Лист данных
  • 4-Square, GBPC40
  • Tray
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/GBPC4010-T0GLead free / RoHS Compliant
  • 1235
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
GBPC4010 T0G
Category
Diodes - Bridge Rectifiers
Manufacturer
Taiwan Semiconductor Corporation
Description
BRIDGE RECT 1P 1KV 40A GBPC40
Package
Tray
Series
-
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
QC Terminal
Package / Case
4-Square, GBPC40
Supplier Device Package
GBPC40
Technology
Standard
Diode Type
Single Phase
Voltage - Peak Reverse (Max)
1 kV
Current - Average Rectified (Io)
40 A
Voltage - Forward (Vf) (Max) @ If
1.1 V @ 20 A
Current - Reverse Leakage @ Vr
10 µA @ 1000 V
Package_case
4-Square, GBPC40

GBPC4010 T0G Гарантии

jinfftry-guarantee1,https://www.jinftry.ru/product_detail/GBPC4010-T0G

jinfftry-guarantee2,https://www.jinftry.ru/product_detail/GBPC4010-T0G

jinfftry-guarantee3,https://www.jinftry.ru/product_detail/GBPC4010-T0G

• Ответьте оперативно

• Гарантированное качество

• Глобальный доступ

• Конкурентоспособная рыночная цена

• Универсальные услуги цепочки поставок

Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!

У вас есть вопросы о GBPC4010 T0G ?
Не стесняйтесь связаться с нами:

+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )

Комментарии

Оставьте свой комментарий

Taiwan Semiconductor Corporation

GBPC4008 T0G,https://www.jinftry.ru/product_detail/GBPC4010-T0G
GBPC4008 T0G

BRIDGE RECT 1P 800V 40A GBPC40

TS15PL06GHD2G,https://www.jinftry.ru/product_detail/GBPC4010-T0G
TS15PL06GHD2G

BRIDGE RECT 1P 800V 40A GBPC40

TS15PL06GHC2G,https://www.jinftry.ru/product_detail/GBPC4010-T0G
TS15PL06GHC2G

BRIDGE RECT 1P 800V 40A GBPC40

TS15PL05GHD2G,https://www.jinftry.ru/product_detail/GBPC4010-T0G
TS15PL05GHD2G

BRIDGE RECT 1P 800V 40A GBPC40

TS15PL05GHC2G,https://www.jinftry.ru/product_detail/GBPC4010-T0G
TS15PL05GHC2G

BRIDGE RECT 1P 800V 40A GBPC40

TS15PL06G D2G,https://www.jinftry.ru/product_detail/GBPC4010-T0G
TS15PL06G D2G

BRIDGE RECT 1P 800V 40A GBPC40

TS15PL06G C2G,https://www.jinftry.ru/product_detail/GBPC4010-T0G
TS15PL06G C2G

BRIDGE RECT 1P 800V 40A GBPC40

TS15PL05G D2G,https://www.jinftry.ru/product_detail/GBPC4010-T0G
TS15PL05G D2G

BRIDGE RECT 1P 800V 40A GBPC40

What is a power module

What is a power module Features of the power module Power drive module role What are the power drive modules ,Provide you with power drive modules,A Power Module is a highly integrated electronic device that controls and converts electrical energy. It usually includes multiple power semiconductor devices (such as IGBTs, MOSFETs, diodes, etc.),

Introduction to Semiconductor Discrete Devices

Introduction to Semiconductor Discrete Devices Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices. Introduction to Semiconductor Discrete Devices Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe

What is a bipolar transistor and what is its operating mode

What is a bipolar transistor How bipolar transistors work Bipolar junction transistor four modes of operation Bipolar transistor development applications What is a bipolar transistor

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems. Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
Индекс продукции
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
0
1
2
3
4
5
6
7
8
9
Shopping Cart Tel: +86-755-82518276 Email: sales@jinftry.com Skype: +8615019224070, annies65, +8615118125813 QQ: 568248857, 827259012, 316249462 Mobile: +8615019224070, +8615118118839, +8615118125813 WeChat: Send Message
TOP