GBJ3510

MDD GBJ3510

Изображение только для справки, пожалуйста, обратитесь к спецификации продукта

  • GBJ3510
  • MDD
  • RECTIFIER BRIDGE 35A 1000V GBJ
  • Diodes - Bridge Rectifiers
  • GBJ3510 Лист данных
  • 4-SIP, GBJ
  • Box
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/GBJ3510Lead free / RoHS Compliant
  • 1785
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
GBJ3510
Category
Diodes - Bridge Rectifiers
Manufacturer
MDD
Description
RECTIFIER BRIDGE 35A 1000V GBJ
Package
Box
Series
GBJ
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
4-SIP, GBJ
Supplier Device Package
GBJ
Technology
Standard
Diode Type
Single Phase
Voltage - Peak Reverse (Max)
1 kV
Current - Average Rectified (Io)
35 A
Voltage - Forward (Vf) (Max) @ If
1.05 V @ 17.5 A
Current - Reverse Leakage @ Vr
10 µA @ 1000 V
Package_case
4-SIP, GBJ

GBJ3510 Гарантии

jinfftry-guarantee1,https://www.jinftry.ru/product_detail/GBJ3510

jinfftry-guarantee2,https://www.jinftry.ru/product_detail/GBJ3510

jinfftry-guarantee3,https://www.jinftry.ru/product_detail/GBJ3510

• Ответьте оперативно

• Гарантированное качество

• Глобальный доступ

• Конкурентоспособная рыночная цена

• Универсальные услуги цепочки поставок

Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!

У вас есть вопросы о GBJ3510 ?
Не стесняйтесь связаться с нами:

+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )

Комментарии

Оставьте свой комментарий

MDD

GBJ5010,https://www.jinftry.ru/product_detail/GBJ3510
GBJ5010

RECTIFIER BRIDGE 50A 1000V GBJ

KBPC3510,https://www.jinftry.ru/product_detail/GBJ3510
KBPC3510

RECTIFIER BRIDGE 50A 1000V GBJ

KBPC5010,https://www.jinftry.ru/product_detail/GBJ3510
KBPC5010

RECTIFIER BRIDGE 50A 1000V GBJ

KBPC5010,https://www.jinftry.ru/product_detail/GBJ3510
KBPC5010

RECTIFIER BRIDGE 50A 1000V GBJ

ABS8,https://www.jinftry.ru/product_detail/GBJ3510
ABS8

RECTIFIER BRIDGE 50A 1000V GBJ

ABS210,https://www.jinftry.ru/product_detail/GBJ3510
ABS210

RECTIFIER BRIDGE 50A 1000V GBJ

KMB16F,https://www.jinftry.ru/product_detail/GBJ3510
KMB16F

RECTIFIER BRIDGE 50A 1000V GBJ

KBP210 L,https://www.jinftry.ru/product_detail/GBJ3510
KBP210 L

RECTIFIER BRIDGE 50A 1000V GBJ

What is a power module

What is a power module Features of the power module Power drive module role What are the power drive modules ,Provide you with power drive modules,A Power Module is a highly integrated electronic device that controls and converts electrical energy. It usually includes multiple power semiconductor devices (such as IGBTs, MOSFETs, diodes, etc.),

Introduction to Semiconductor Discrete Devices

Introduction to Semiconductor Discrete Devices Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices. Introduction to Semiconductor Discrete Devices Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe

What is a bipolar transistor and what is its operating mode

What is a bipolar transistor How bipolar transistors work Bipolar junction transistor four modes of operation Bipolar transistor development applications What is a bipolar transistor

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems. Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
Индекс продукции
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
0
1
2
3
4
5
6
7
8
9
Shopping Cart Tel: +86-755-82518276 Email: sales@jinftry.com Skype: +8615019224070, annies65, +8615118125813 QQ: 568248857, 827259012, 316249462 Mobile: +8615019224070, +8615118118839, +8615118125813 WeChat: Send Message
TOP