G2R120MT33J

GeneSiC Semiconductor G2R120MT33J

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  • G2R120MT33J
  • GeneSiC Semiconductor
  • SIC MOSFET N-CH TO263-7
  • Transistors - FETs, MOSFETs - Single
  • G2R120MT33J Лист данных
  • TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
  • Tube
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/G2R120MT33JLead free / RoHS Compliant
  • 1354
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
G2R120MT33J
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
GeneSiC Semiconductor
Description
SIC MOSFET N-CH TO263-7
Package
Tube
Series
G2R™
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Supplier Device Package
TO-263-7
Technology
SiCFET (Silicon Carbide)
Power Dissipation (Max)
-
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
3300 V
Current - Continuous Drain (Id) @ 25°C
35A
Rds On (Max) @ Id, Vgs
156mOhm @ 20A, 20V
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) (Max) @ Vgs
145 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds
3706 pF @ 1000 V
Vgs (Max)
+25V, -10V
Drive Voltage (Max Rds On, Min Rds On)
20V
Package_case
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

G2R120MT33J Гарантии

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