GeneSiC Semiconductor G2R120MT33J
- G2R120MT33J
- GeneSiC Semiconductor
- SIC MOSFET N-CH TO263-7
- Transistors - FETs, MOSFETs - Single
- G2R120MT33J Лист данных
- TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
- Tube
- Lead free / RoHS Compliant
- 1354
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number G2R120MT33J |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer GeneSiC Semiconductor |
Description SIC MOSFET N-CH TO263-7 |
Package Tube |
Series G2R™ |
Operating Temperature -55°C ~ 175°C (TJ) |
Mounting Type Surface Mount |
Package / Case TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
Supplier Device Package TO-263-7 |
Technology SiCFET (Silicon Carbide) |
Power Dissipation (Max) - |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 3300 V |
Current - Continuous Drain (Id) @ 25°C 35A |
Rds On (Max) @ Id, Vgs 156mOhm @ 20A, 20V |
Vgs(th) (Max) @ Id - |
Gate Charge (Qg) (Max) @ Vgs 145 nC @ 20 V |
Input Capacitance (Ciss) (Max) @ Vds 3706 pF @ 1000 V |
Vgs (Max) +25V, -10V |
Drive Voltage (Max Rds On, Min Rds On) 20V |
Package_case TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
G2R120MT33J Гарантии
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• Гарантированное качество
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