Infineon Technologies FZ800R12KE3HOSA1
- FZ800R12KE3HOSA1
- Infineon Technologies
- IGBT MOD 1200V 800A 3550W
- Transistors - IGBTs - Modules
- FZ800R12KE3HOSA1 Лист данных
- Module
- Bulk
- Lead free / RoHS Compliant
- 23452
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number FZ800R12KE3HOSA1 |
Category Transistors - IGBTs - Modules |
Manufacturer Infineon Technologies |
Description IGBT MOD 1200V 800A 3550W |
Package Bulk |
Series - |
Operating Temperature -40°C ~ 125°C (TJ) |
Mounting Type Chassis Mount |
Package / Case Module |
Supplier Device Package Module |
Power - Max 3550 W |
Configuration Single |
Current - Collector (Ic) (Max) 800 A |
Voltage - Collector Emitter Breakdown (Max) 1200 V |
Current - Collector Cutoff (Max) 5 mA |
IGBT Type Trench Field Stop |
Vce(on) (Max) @ Vge, Ic 2.15V @ 15V, 800A |
Input Capacitance (Cies) @ Vce 56 nF @ 25 V |
Input Standard |
NTC Thermistor No |
Package_case Module |
FZ800R12KE3HOSA1 Гарантии
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• Гарантированное качество
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