FZ400R17KE4HOSA1

Infineon Technologies FZ400R17KE4HOSA1

Изображение только для справки, пожалуйста, обратитесь к спецификации продукта

  • FZ400R17KE4HOSA1
  • Infineon Technologies
  • MODULE IGBT 1700V AG-62MM-2
  • Transistors - IGBTs - Modules
  • FZ400R17KE4HOSA1 Лист данных
  • -
  • Bulk
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/FZ400R17KE4HOSA1Lead free / RoHS Compliant
  • 1785
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
FZ400R17KE4HOSA1
Category
Transistors - IGBTs - Modules
Manufacturer
Infineon Technologies
Description
MODULE IGBT 1700V AG-62MM-2
Package
Bulk
Series
-
Operating Temperature
-
Mounting Type
-
Package / Case
-
Supplier Device Package
-
Power - Max
-
Configuration
-
Current - Collector (Ic) (Max)
-
Voltage - Collector Emitter Breakdown (Max)
-
Current - Collector Cutoff (Max)
-
IGBT Type
-
Vce(on) (Max) @ Vge, Ic
-
Input Capacitance (Cies) @ Vce
-
Input
-
NTC Thermistor
-
Package_case
-

FZ400R17KE4HOSA1 Гарантии

jinfftry-guarantee1,https://www.jinftry.ru/product_detail/FZ400R17KE4HOSA1

jinfftry-guarantee2,https://www.jinftry.ru/product_detail/FZ400R17KE4HOSA1

jinfftry-guarantee3,https://www.jinftry.ru/product_detail/FZ400R17KE4HOSA1

• Ответьте оперативно

• Гарантированное качество

• Глобальный доступ

• Конкурентоспособная рыночная цена

• Универсальные услуги цепочки поставок

Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!

У вас есть вопросы о FZ400R17KE4HOSA1 ?
Не стесняйтесь связаться с нами:

+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )

Комментарии

Оставьте свой комментарий

Infineon Technologies
Infineon Technologies,https://www.jinftry.ru/product_detail/FZ400R17KE4HOSA1
FS100R12KT4GBOSA1,https://www.jinftry.ru/product_detail/FZ400R17KE4HOSA1
FS100R12KT4GBOSA1

IGBT MOD 1200V 100A 515W

FS100R17N3E4BOSA1,https://www.jinftry.ru/product_detail/FZ400R17KE4HOSA1
FS100R17N3E4BOSA1

IGBT MOD 1200V 100A 515W

FF600R12ME4BOSA1,https://www.jinftry.ru/product_detail/FZ400R17KE4HOSA1
FF600R12ME4BOSA1

IGBT MOD 1200V 100A 515W

FZ1500R33HE3BPSA1,https://www.jinftry.ru/product_detail/FZ400R17KE4HOSA1
FZ1500R33HE3BPSA1

IGBT MOD 1200V 100A 515W

FS30R06W1E3BOMA1,https://www.jinftry.ru/product_detail/FZ400R17KE4HOSA1
FS30R06W1E3BOMA1

IGBT MOD 1200V 100A 515W

FP50R06W2E3BOMA1,https://www.jinftry.ru/product_detail/FZ400R17KE4HOSA1
FP50R06W2E3BOMA1

IGBT MOD 1200V 100A 515W

FF75R12RT4HOSA1,https://www.jinftry.ru/product_detail/FZ400R17KE4HOSA1
FF75R12RT4HOSA1

IGBT MOD 1200V 100A 515W

FD150R12RT4HOSA1,https://www.jinftry.ru/product_detail/FZ400R17KE4HOSA1
FD150R12RT4HOSA1

IGBT MOD 1200V 100A 515W

What is a power module

What is a power module Features of the power module Power drive module role What are the power drive modules ,Provide you with power drive modules,A Power Module is a highly integrated electronic device that controls and converts electrical energy. It usually includes multiple power semiconductor devices (such as IGBTs, MOSFETs, diodes, etc.),

Introduction to Semiconductor Discrete Devices

Introduction to Semiconductor Discrete Devices Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices. Introduction to Semiconductor Discrete Devices Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe

What is a bipolar transistor and what is its operating mode

What is a bipolar transistor How bipolar transistors work Bipolar junction transistor four modes of operation Bipolar transistor development applications What is a bipolar transistor

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems. Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
Индекс продукции
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
0
1
2
3
4
5
6
7
8
9
Shopping Cart Tel: +86-755-82518276 Email: sales@jinftry.com Skype: +8615019224070, annies65, +8615118125813 QQ: 568248857, 827259012, 316249462 Mobile: +8615019224070, +8615118118839, +8615118125813 WeChat: Send Message
TOP