Infineon Technologies FZ30R07W1E3B31ABOMA1
- FZ30R07W1E3B31ABOMA1
- Infineon Technologies
- IGBT MODULE
- Transistors - IGBTs - Modules
- FZ30R07W1E3B31ABOMA1 Лист данных
- -
- Tray
- Lead free / RoHS Compliant
- 22264
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number FZ30R07W1E3B31ABOMA1 |
Category Transistors - IGBTs - Modules |
Manufacturer Infineon Technologies |
Description IGBT MODULE |
Package Tray |
Series - |
Operating Temperature - |
Mounting Type - |
Package / Case - |
Supplier Device Package - |
Power - Max - |
Configuration - |
Current - Collector (Ic) (Max) - |
Voltage - Collector Emitter Breakdown (Max) - |
Current - Collector Cutoff (Max) - |
IGBT Type - |
Vce(on) (Max) @ Vge, Ic - |
Input Capacitance (Cies) @ Vce - |
Input - |
NTC Thermistor - |
Package_case - |
FZ30R07W1E3B31ABOMA1 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о FZ30R07W1E3B31ABOMA1 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
Infineon Technologies
FS900R08A2P2B31BOSA1
IGBT MODULE PACK2 DRV HYBRID2-1
FS800R07A2E3B32BOSA1
IGBT MODULE PACK2 DRV HYBRID2-1
FS800R07A2E3B31BOSA1
IGBT MODULE PACK2 DRV HYBRID2-1
FS400R12A2T4BOSA1
IGBT MODULE PACK2 DRV HYBRID2-1
FS600R07A2E3B32BOSA1
IGBT MODULE PACK2 DRV HYBRID2-1
FS600R07A2E3B31BOSA1
IGBT MODULE PACK2 DRV HYBRID2-1
FS400R07A1E3H5BPSA1
IGBT MODULE PACK2 DRV HYBRID2-1
FS200R12A1T4H5BOMA1
IGBT MODULE PACK2 DRV HYBRID2-1
What is a power module
What is a power module Features of the power module Power drive module role What are the power drive modules ,Provide you with power drive modules,A Power Module is a highly integrated electronic device that controls and converts electrical energy. It usually includes multiple power semiconductor devices (such as IGBTs, MOSFETs, diodes, etc.),
Introduction to Semiconductor Discrete Devices
Introduction to Semiconductor Discrete Devices
Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices.
Introduction to Semiconductor Discrete Devices
Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe
What is a bipolar transistor and what is its operating mode
What is a bipolar transistor
How bipolar transistors work
Bipolar junction transistor four modes of operation
Bipolar transistor development applications
What is a bipolar transistor
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i