Infineon Technologies FZ1600R17KF6CB2S2NOSA1
- FZ1600R17KF6CB2S2NOSA1
- Infineon Technologies
- IGBT MODULE A-IHM130-1
- Transistors - IGBTs - Modules
- FZ1600R17KF6CB2S2NOSA1 Лист данных
- -
- Bulk
- Lead free / RoHS Compliant
- 6977
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number FZ1600R17KF6CB2S2NOSA1 |
Category Transistors - IGBTs - Modules |
Manufacturer Infineon Technologies |
Description IGBT MODULE A-IHM130-1 |
Package Bulk |
Series - |
Operating Temperature - |
Mounting Type - |
Package / Case - |
Supplier Device Package - |
Power - Max - |
Configuration - |
Current - Collector (Ic) (Max) - |
Voltage - Collector Emitter Breakdown (Max) - |
Current - Collector Cutoff (Max) - |
IGBT Type - |
Vce(on) (Max) @ Vge, Ic - |
Input Capacitance (Cies) @ Vce - |
Input - |
NTC Thermistor - |
Package_case - |
FZ1600R17KF6CB2S2NOSA1 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о FZ1600R17KF6CB2S2NOSA1 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
Infineon Technologies
FZ1600R12KF4S1NOSA1
IGBT MODULE 1200V AIHM130-2
FZ900R12KF5NOSA1
IGBT MODULE 1200V AIHM130-2
FT150R12KE3B5BOSA1
IGBT MODULE 1200V AIHM130-2
F3L200R12N2H3B47BPSA1
IGBT MODULE 1200V AIHM130-2
FS100R12N2T4B11BOSA1
IGBT MODULE 1200V AIHM130-2
IFF600B12ME4B11BOSA1
IGBT MODULE 1200V AIHM130-2
FS20R06XL4BOMA1
IGBT MODULE 1200V AIHM130-2
BSM150GB170DLCE3256HDLA1
IGBT MODULE 1200V AIHM130-2
What is a power module
What is a power module Features of the power module Power drive module role What are the power drive modules ,Provide you with power drive modules,A Power Module is a highly integrated electronic device that controls and converts electrical energy. It usually includes multiple power semiconductor devices (such as IGBTs, MOSFETs, diodes, etc.),
Introduction to Semiconductor Discrete Devices
Introduction to Semiconductor Discrete Devices
Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices.
Introduction to Semiconductor Discrete Devices
Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe
What is a bipolar transistor and what is its operating mode
What is a bipolar transistor
How bipolar transistors work
Bipolar junction transistor four modes of operation
Bipolar transistor development applications
What is a bipolar transistor
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i