Infineon Technologies FZ1600R17KE3NOSA1
- FZ1600R17KE3NOSA1
- Infineon Technologies
- IGBT MOD 1700V 2300A 8950W
- Transistors - IGBTs - Modules
- FZ1600R17KE3NOSA1 Лист данных
- Module
- Bulk
- Lead free / RoHS Compliant
- 4233
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number FZ1600R17KE3NOSA1 |
Category Transistors - IGBTs - Modules |
Manufacturer Infineon Technologies |
Description IGBT MOD 1700V 2300A 8950W |
Package Bulk |
Series - |
Operating Temperature -40°C ~ 125°C (TJ) |
Mounting Type Chassis Mount |
Package / Case Module |
Supplier Device Package Module |
Power - Max 8950 W |
Configuration Three Phase Inverter |
Current - Collector (Ic) (Max) 2300 A |
Voltage - Collector Emitter Breakdown (Max) 1700 V |
Current - Collector Cutoff (Max) 5 mA |
IGBT Type NPT |
Vce(on) (Max) @ Vge, Ic 2.45V @ 15V, 600A |
Input Capacitance (Cies) @ Vce 145 nF @ 25 V |
Input Standard |
NTC Thermistor Yes |
Package_case Module |
FZ1600R17KE3NOSA1 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о FZ1600R17KE3NOSA1 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
Infineon Technologies
FF1200R12IE5PBPSA1
PP, IHM I, XHP 1,7KV
FS10R06VL4_B2
PP, IHM I, XHP 1,7KV
BSM20GD60DLC
PP, IHM I, XHP 1,7KV
BSM20GD60DLCE3224
PP, IHM I, XHP 1,7KV
BSM25GB120DN2
PP, IHM I, XHP 1,7KV
FB20R06YE3B1BOMA1
PP, IHM I, XHP 1,7KV
FP10R06W1E3BOMA1
PP, IHM I, XHP 1,7KV
FP15R06W1E3BOMA1
PP, IHM I, XHP 1,7KV
What is a power module
What is a power module Features of the power module Power drive module role What are the power drive modules ,Provide you with power drive modules,A Power Module is a highly integrated electronic device that controls and converts electrical energy. It usually includes multiple power semiconductor devices (such as IGBTs, MOSFETs, diodes, etc.),
Introduction to Semiconductor Discrete Devices
Introduction to Semiconductor Discrete Devices
Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices.
Introduction to Semiconductor Discrete Devices
Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe
What is a bipolar transistor and what is its operating mode
What is a bipolar transistor
How bipolar transistors work
Bipolar junction transistor four modes of operation
Bipolar transistor development applications
What is a bipolar transistor
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i