FZ1500R33HL3BPSA3

Infineon Technologies FZ1500R33HL3BPSA3

Изображение только для справки, пожалуйста, обратитесь к спецификации продукта

  • FZ1500R33HL3BPSA3
  • Infineon Technologies
  • FZ1500R33 - INSULATED GATE BIPOL
  • Transistors - Bipolar (BJT) - Single
  • FZ1500R33HL3BPSA3 Лист данных
  • -
  • Bulk
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/FZ1500R33HL3BPSA3Lead free / RoHS Compliant
  • 2956
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
FZ1500R33HL3BPSA3
Category
Transistors - Bipolar (BJT) - Single
Manufacturer
Infineon Technologies
Description
FZ1500R33 - INSULATED GATE BIPOL
Package
Bulk
Series
-
Operating Temperature
-
Mounting Type
-
Package / Case
-
Supplier Device Package
-
Power - Max
-
Transistor Type
-
Current - Collector (Ic) (Max)
-
Voltage - Collector Emitter Breakdown (Max)
-
Vce Saturation (Max) @ Ib, Ic
-
Current - Collector Cutoff (Max)
-
DC Current Gain (hFE) (Min) @ Ic, Vce
-
Frequency - Transition
-
Package_case
-

FZ1500R33HL3BPSA3 Гарантии

jinfftry-guarantee1,https://www.jinftry.ru/product_detail/FZ1500R33HL3BPSA3

jinfftry-guarantee2,https://www.jinftry.ru/product_detail/FZ1500R33HL3BPSA3

jinfftry-guarantee3,https://www.jinftry.ru/product_detail/FZ1500R33HL3BPSA3

• Ответьте оперативно

• Гарантированное качество

• Глобальный доступ

• Конкурентоспособная рыночная цена

• Универсальные услуги цепочки поставок

Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!

У вас есть вопросы о FZ1500R33HL3BPSA3 ?
Не стесняйтесь связаться с нами:

+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )

Комментарии

Оставьте свой комментарий

Infineon Technologies
Infineon Technologies,https://www.jinftry.ru/product_detail/FZ1500R33HL3BPSA3
IPP50N12S3LAKSA1,https://www.jinftry.ru/product_detail/FZ1500R33HL3BPSA3
IPP50N12S3LAKSA1

OPTIMOS POWER-TRANSISTOR

IKP15N65H5XKSA1718,https://www.jinftry.ru/product_detail/FZ1500R33HL3BPSA3
IKP15N65H5XKSA1718

OPTIMOS POWER-TRANSISTOR

FF225R12ME4BDLA1,https://www.jinftry.ru/product_detail/FZ1500R33HL3BPSA3
FF225R12ME4BDLA1

OPTIMOS POWER-TRANSISTOR

FF300R12ME4BDLA1,https://www.jinftry.ru/product_detail/FZ1500R33HL3BPSA3
FF300R12ME4BDLA1

OPTIMOS POWER-TRANSISTOR

MMBT2907ALT1,https://www.jinftry.ru/product_detail/FZ1500R33HL3BPSA3
MMBT2907ALT1

OPTIMOS POWER-TRANSISTOR

BC858C,https://www.jinftry.ru/product_detail/FZ1500R33HL3BPSA3
BC858C

OPTIMOS POWER-TRANSISTOR

MMBT3906LT1,https://www.jinftry.ru/product_detail/FZ1500R33HL3BPSA3
MMBT3906LT1

OPTIMOS POWER-TRANSISTOR

BC 858C E6327,https://www.jinftry.ru/product_detail/FZ1500R33HL3BPSA3
BC 858C E6327

OPTIMOS POWER-TRANSISTOR

What is a power module

What is a power module Features of the power module Power drive module role What are the power drive modules ,Provide you with power drive modules,A Power Module is a highly integrated electronic device that controls and converts electrical energy. It usually includes multiple power semiconductor devices (such as IGBTs, MOSFETs, diodes, etc.),

Introduction to Semiconductor Discrete Devices

Introduction to Semiconductor Discrete Devices Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices. Introduction to Semiconductor Discrete Devices Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe

What is a bipolar transistor and what is its operating mode

What is a bipolar transistor How bipolar transistors work Bipolar junction transistor four modes of operation Bipolar transistor development applications What is a bipolar transistor

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems. Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
Индекс продукции
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
0
1
2
3
4
5
6
7
8
9
Shopping Cart Tel: +86-755-82518276 Email: sales@jinftry.com Skype: +8615019224070, annies65, +8615118125813 QQ: 568248857, 827259012, 316249462 Mobile: +8615019224070, +8615118118839, +8615118125813 WeChat: Send Message
TOP