Infineon Technologies FZ1200R17HE4HOSA2
- FZ1200R17HE4HOSA2
- Infineon Technologies
- IGBT MOD 1700V 1200A 7800W
- Transistors - IGBTs - Modules
- FZ1200R17HE4HOSA2 Лист данных
- Module
- Tray
- Lead free / RoHS Compliant
- 6440
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number FZ1200R17HE4HOSA2 |
Category Transistors - IGBTs - Modules |
Manufacturer Infineon Technologies |
Description IGBT MOD 1700V 1200A 7800W |
Package Tray |
Series - |
Operating Temperature -40°C ~ 150°C |
Mounting Type Chassis Mount |
Package / Case Module |
Supplier Device Package Module |
Power - Max 7800 W |
Configuration Single Switch |
Current - Collector (Ic) (Max) 1200 A |
Voltage - Collector Emitter Breakdown (Max) 1700 V |
Current - Collector Cutoff (Max) 5 mA |
IGBT Type - |
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 1200A |
Input Capacitance (Cies) @ Vce 97 nF @ 25 V |
Input Standard |
NTC Thermistor No |
Package_case Module |
FZ1200R17HE4HOSA2 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о FZ1200R17HE4HOSA2 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
Infineon Technologies
DF1400R12IP4DBOSA1
IGBT MOD 1200V 1400A 7700W
FD1400R12IP4DBOSA1
IGBT MOD 1200V 1400A 7700W
FZ1200R17HE4PHPSA1
IGBT MOD 1200V 1400A 7700W
FS450R17OE4PBOSA1
IGBT MOD 1200V 1400A 7700W
FS450R17OP4PBOSA1
IGBT MOD 1200V 1400A 7700W
FZ1600R17HP4HOSA2
IGBT MOD 1200V 1400A 7700W
FF1000R17IE4PBOSA1
IGBT MOD 1200V 1400A 7700W
FF1400R12IP4PBOSA1
IGBT MOD 1200V 1400A 7700W
2SC5200 2SA1943 NPN transistor electronic power amplifier, data sheet, application characteristics
The 2SA1943 and 2SC5200 are complementary NPN and PNP power transistors commonly used in electronic power amplifier circuits. When used together, they are often used in high-power audio amplifiers to amplify audio signals.
The most complete introduction to IGBT modules in 2023
IGBTs are used in many applications, such as motor drives, industrial control, power transmission, renewable energy, and electric transportation, mainly because IGBTs provide a convenient and reliable power-switching solution for handling high-power and high-voltage applications.
What is a Junction Diode? What are the types of junction diodes?
What is a Junction Diode? A junction diode is a semiconductor device consisting of a structure composed of a P-type semiconductor and an N-type semiconductor. It is also known as a PN junction diode or simply a diode. Junction diodes are one of the most basic and common types of diodes.
Infineon launches CYW20820 Bluetooth and Bluetooth Low Energy System-on-Chip (SoC)
Infineon launches CYW20820 Bluetooth and Bluetooth Low Energy System-on-Chip (SoC)
Infineon will introduce the AIROC™ CYW20820 Bluetooth and Bluetooth Low Energy System-on-Chip (SoC) to further expand its AIROC Bluetooth family of products. AIROC CYW20820 Bluetooth and Bluetooth Low Energy System-on-Chip, designed for IoT applications, complies with the Bluetooth 5.2 core specification. It can support a wide range of home automation and sensor application scenarios, including medical, home,