Infineon Technologies FS75R07N2E4_B11
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- FS75R07N2E4_B11
- Infineon Technologies
- FS75R07 - IGBT MODULE
- Transistors - IGBTs - Single
- FS75R07N2E4_B11 Лист данных
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Lead free / RoHS Compliant - 9907
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
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| Part Number FS75R07N2E4_B11 |
| Category Transistors - IGBTs - Single |
| Manufacturer Infineon Technologies |
| Description FS75R07 - IGBT MODULE |
| Package Bulk |
| Series - |
| Operating Temperature - |
| Mounting Type - |
| Package / Case - |
| Supplier Device Package - |
| Power - Max - |
| Input Type - |
| Reverse Recovery Time (trr) - |
| Current - Collector (Ic) (Max) - |
| Voltage - Collector Emitter Breakdown (Max) - |
| IGBT Type - |
| Vce(on) (Max) @ Vge, Ic - |
| Gate Charge - |
| Td (on/off) @ 25°C - |
| Test Condition - |
| Current - Collector Pulsed (Icm) - |
| Switching Energy - |
| Package_case - |
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Picture 01
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Maximum reverse voltage: 100V
Maximum forward current: 200mA
Peak Forward Current: 450mA
Forward Voltage (at 1.0mA): 1V
Reverse current (at 75V): 5nA
Maximum working temperature: 150°C
Maximum storage temperature: 175°C
Switching time: 4ns
1N4148 diodes are common in applic
