ON Semiconductor FQI7N60TU
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- FQI7N60TU
- ON Semiconductor
- MOSFET N-CH 600V 7.4A I2PAK
- Transistors - FETs, MOSFETs - Single
- FQI7N60TU Лист данных
- TO-262-3 Long Leads, I²Pak, TO-262AA
- Tube
-
Lead free / RoHS Compliant - 835
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number FQI7N60TU |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer ON Semiconductor |
| Description MOSFET N-CH 600V 7.4A I2PAK |
| Package Tube |
| Series QFET® |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Through Hole |
| Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA |
| Supplier Device Package I2PAK (TO-262) |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 3.13W (Ta), 142W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 600 V |
| Current - Continuous Drain (Id) @ 25°C 7.4A (Tc) |
| Rds On (Max) @ Id, Vgs 1Ohm @ 3.7A, 10V |
| Vgs(th) (Max) @ Id 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs 38 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 1430 pF @ 25 V |
| Vgs (Max) ±30V |
| Drive Voltage (Max Rds On, Min Rds On) 10V |
| Package_case TO-262-3 Long Leads, I²Pak, TO-262AA |
FQI7N60TU Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о FQI7N60TU ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
FQI7N60TU сопутствующие товары
Комментарии
ON Semiconductor
FDMC7570S
MOSFET N-CH 25V 27A/40A POWER33
FDB150N10
MOSFET N-CH 25V 27A/40A POWER33
FDMS8570SDC
MOSFET N-CH 25V 27A/40A POWER33
FCPF400N60
MOSFET N-CH 25V 27A/40A POWER33
FDP20N50F
MOSFET N-CH 25V 27A/40A POWER33
FDB38N30U
MOSFET N-CH 25V 27A/40A POWER33
FCMT199N60
MOSFET N-CH 25V 27A/40A POWER33
FDMS5352
MOSFET N-CH 25V 27A/40A POWER33
battery charger
Battery charger according to the design circuit operating frequency to divide, can be divided into power frequency machine and high frequency machine. The power frequency machine is designed based on the traditional analog circuit principle, the internal power devices (such as transformers, inductors, capacitors, etc.) are larger, and there is generally less noise when the load is larger, but the model has strong resistance performance in the harsh grid environmental conditions, and the reliabil
Datasheet and working principle of 1N4001 rectifier diode
Friends who are familiar with diodes should know that 1N4001 is a common rectifier diode used to convert alternating current into direct current. This type of diode has a wide range of applications in electronic equipment and circuits.
What are IGBTs? How to improve the thermal performance design of IGBT on PCB
What are IGBTs? How to improve the thermal performance design of IGBT on PCB
IGBT - Insulated Gate Bipolar Transistor. An IGBT is a power semiconductor device used in high voltage and high current applications. They are mainly used as switches in power electronic circuits. It's worth noting in the name IGBT, which has an insulated gate like a FET and a bipolar transistor like a BJT. The main reason for this is that an IGBT is indeed a device that combines the advantages of both transistors
The latest 2N3055 transistor datasheet, application, and price analysis in 2023
2N3055 is a commonly used power transistor with a wide range of applications and reliable performance. Jinftry will introduce the detailed specifications of the 2N3055 transistor, including its datasheet, characteristics, and parameters. In addition, the application areas of the 2N3055 transistor will be discussed, and its price and market supply and demand will be discussed.
