FQI4N80TU

ON Semiconductor FQI4N80TU

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  • FQI4N80TU
  • ON Semiconductor
  • MOSFET N-CH 800V 3.9A I2PAK
  • Transistors - FETs, MOSFETs - Single
  • FQI4N80TU Лист данных
  • TO-262-3 Long Leads, I²Pak, TO-262AA
  • Tube
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/FQI4N80TULead free / RoHS Compliant
  • 1588
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
FQI4N80TU
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
ON Semiconductor
Description
MOSFET N-CH 800V 3.9A I2PAK
Package
Tube
Series
QFET®
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package
I2PAK (TO-262)
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
3.13W (Ta), 130W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
3.9A (Tc)
Rds On (Max) @ Id, Vgs
3.6Ohm @ 1.95A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
880 pF @ 25 V
Vgs (Max)
±30V
Drive Voltage (Max Rds On, Min Rds On)
10V
Package_case
TO-262-3 Long Leads, I²Pak, TO-262AA

FQI4N80TU Гарантии

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