ON Semiconductor FQI4N80TU
- FQI4N80TU
- ON Semiconductor
- MOSFET N-CH 800V 3.9A I2PAK
- Transistors - FETs, MOSFETs - Single
- FQI4N80TU Лист данных
- TO-262-3 Long Leads, I²Pak, TO-262AA
- Tube
- Lead free / RoHS Compliant
- 1588
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number FQI4N80TU |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer ON Semiconductor |
Description MOSFET N-CH 800V 3.9A I2PAK |
Package Tube |
Series QFET® |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Through Hole |
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package I2PAK (TO-262) |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 3.13W (Ta), 130W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 800 V |
Current - Continuous Drain (Id) @ 25°C 3.9A (Tc) |
Rds On (Max) @ Id, Vgs 3.6Ohm @ 1.95A, 10V |
Vgs(th) (Max) @ Id 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 880 pF @ 25 V |
Vgs (Max) ±30V |
Drive Voltage (Max Rds On, Min Rds On) 10V |
Package_case TO-262-3 Long Leads, I²Pak, TO-262AA |
FQI4N80TU Гарантии
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• Гарантированное качество
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