FQD5N20LTM

Fairchild Semiconductor FQD5N20LTM

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  • FQD5N20LTM
  • Fairchild Semiconductor
  • POWER FIELD-EFFECT TRANSISTOR, 3
  • Transistors - FETs, MOSFETs - Single
  • FQD5N20LTM Лист данных
  • TO-252-3, DPak (2 Leads + Tab), SC-63
  • Bulk
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/FQD5N20LTMLead free / RoHS Compliant
  • 709
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
FQD5N20LTM
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Fairchild Semiconductor
Description
POWER FIELD-EFFECT TRANSISTOR, 3
Package
Bulk
Series
QFET®
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
TO-252AA
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
2.5W (Ta), 37W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
3.8A (Tc)
Rds On (Max) @ Id, Vgs
1.2Ohm @ 1.9A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
6.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds
325 pF @ 25 V
Vgs (Max)
±20V
Drive Voltage (Max Rds On, Min Rds On)
5V, 10V
Package_case
TO-252-3, DPak (2 Leads + Tab), SC-63

FQD5N20LTM Гарантии

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