FQD10N20LTM

ON Semiconductor FQD10N20LTM

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  • FQD10N20LTM
  • ON Semiconductor
  • MOSFET N-CH 200V 7.6A TO252
  • Transistors - FETs, MOSFETs - Single
  • FQD10N20LTM Лист данных
  • TO-252-3, DPak (2 Leads + Tab), SC-63
  • Cut Tape (CT)
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/FQD10N20LTMLead free / RoHS Compliant
  • 6944
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
FQD10N20LTM
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
ON Semiconductor
Description
MOSFET N-CH 200V 7.6A TO252
Package
Cut Tape (CT)
Series
QFET®
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
D-Pak
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
2.5W (Ta), 51W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
7.6A (Tc)
Rds On (Max) @ Id, Vgs
360mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
17 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds
830 pF @ 25 V
Vgs (Max)
±20V
Drive Voltage (Max Rds On, Min Rds On)
5V, 10V
Package_case
TO-252-3, DPak (2 Leads + Tab), SC-63

FQD10N20LTM Гарантии

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