Fairchild Semiconductor FQB12N50TM
- FQB12N50TM
- Fairchild Semiconductor
- TRANS MOSFET N-CH 500V 12.1A 3PI
- Transistors - FETs, MOSFETs - Arrays
- FQB12N50TM Лист данных
- -
- Bulk
- Lead free / RoHS Compliant
- 4010
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number FQB12N50TM |
Category Transistors - FETs, MOSFETs - Arrays |
Manufacturer Fairchild Semiconductor |
Description TRANS MOSFET N-CH 500V 12.1A 3PI |
Package Bulk |
Series - |
Operating Temperature - |
Mounting Type - |
Package / Case - |
Supplier Device Package - |
Power - Max - |
FET Type - |
FET Feature - |
Drain to Source Voltage (Vdss) - |
Current - Continuous Drain (Id) @ 25°C - |
Rds On (Max) @ Id, Vgs - |
Vgs(th) (Max) @ Id - |
Gate Charge (Qg) (Max) @ Vgs - |
Input Capacitance (Ciss) (Max) @ Vds - |
Package_case - |
FQB12N50TM Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о FQB12N50TM ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
Fairchild Semiconductor
HUF75639S3ST_Q
TRANS MOSFET N-CH 100V 56A 3PIN(
FDMC8010A
TRANS MOSFET N-CH 100V 56A 3PIN(
FDZ2552P
TRANS MOSFET N-CH 100V 56A 3PIN(
FDPF035N06B
TRANS MOSFET N-CH 100V 56A 3PIN(
FDS8936A
TRANS MOSFET N-CH 100V 56A 3PIN(
FQPF13N50CTC003
TRANS MOSFET N-CH 100V 56A 3PIN(
FCP11N65
TRANS MOSFET N-CH 100V 56A 3PIN(
HUF75637S3
TRANS MOSFET N-CH 100V 56A 3PIN(
An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications
An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications
IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the advantages of MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and BJT (Bipolar Transistor). It is widely used in the field of power electronics and used in switching power supplies. , motor drive, inverter and other applications.
IGBT module CM1000DU-34NF The IGBT module is a highly efficient and comp
Classification of IGBT modules, difference between application characteristics and MOSFETs
Classification of IGBT modules, difference between application characteristics and MOSFETs
Both MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are commonly used switching devices in power electronics. They each have their own characteristics and application scenarios, the following are their main differences:
The most complete introduction to IGBT modules in 2023
IGBTs are used in many applications, such as motor drives, industrial control, power transmission, renewable energy, and electric transportation, mainly because IGBTs provide a convenient and reliable power-switching solution for handling high-power and high-voltage applications.
1N4148 diode, characteristics - can use 1n4148w, 1n4448 diode instead
1N4148 diode, characteristics - can use 1n4148w, 1n4448 diode instead
The 1N4148 diode is a common fast-switching diode used in a variety of electronic devices.
Picture 01
Basic parameters of 1N4148 diode:
Maximum reverse voltage: 100V
Maximum forward current: 200mA
Peak Forward Current: 450mA
Forward Voltage (at 1.0mA): 1V
Reverse current (at 75V): 5nA
Maximum working temperature: 150°C
Maximum storage temperature: 175°C
Switching time: 4ns
1N4148 diodes are common in applic