Infineon Technologies FP50R12KT4B16BOSA1
- FP50R12KT4B16BOSA1
- Infineon Technologies
- IGBT MOD 1200V 100A 280W
- Transistors - IGBTs - Modules
- FP50R12KT4B16BOSA1 Лист данных
- Module
- Bulk
- Lead free / RoHS Compliant
- 1482
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number FP50R12KT4B16BOSA1 |
Category Transistors - IGBTs - Modules |
Manufacturer Infineon Technologies |
Description IGBT MOD 1200V 100A 280W |
Package Bulk |
Series - |
Operating Temperature -40°C ~ 150°C |
Mounting Type Chassis Mount |
Package / Case Module |
Supplier Device Package Module |
Power - Max 280 W |
Configuration Three Phase Inverter |
Current - Collector (Ic) (Max) 100 A |
Voltage - Collector Emitter Breakdown (Max) 1200 V |
Current - Collector Cutoff (Max) 1 mA |
IGBT Type Trench Field Stop |
Vce(on) (Max) @ Vge, Ic 2.25V @ 15V, 50A |
Input Capacitance (Cies) @ Vce 2.8 nF @ 25 V |
Input Three Phase Bridge Rectifier |
NTC Thermistor Yes |
Package_case Module |
FP50R12KT4B16BOSA1 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о FP50R12KT4B16BOSA1 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
Infineon Technologies
BSM100GB120DN2HOSA1
IGBT MOD 1200V 150A 800W
FS150R07N3E4B11BOSA1
IGBT MOD 1200V 150A 800W
FS100R12N2T4PBPSA1
IGBT MOD 1200V 150A 800W
FF225R17ME4PB11BPSA1
IGBT MOD 1200V 150A 800W
FP75R12KT4PBPSA1
IGBT MOD 1200V 150A 800W
FS100R12KT4GB11BOSA1
IGBT MOD 1200V 150A 800W
FP75R12KT4PB11BPSA1
IGBT MOD 1200V 150A 800W
FF225R12MS4BOSA1
IGBT MOD 1200V 150A 800W
The characteristics of 1N4007 diode and 1N4001 diode, can 1N4007 be used instead of 1N4001?
The characteristics of 1N4007 diode and 1N4001 diode, can 1N4007 be used instead of 1N4001?
"1N4007" and "1N4001" are two types of diode information, which are two common rectifier diodes.
1N4007 and 1N4001 are part of a series of standard recovery time rectifier diodes, mainly used for AC (alternating current) to DC (direct current) conversion.
1N4148 diode, characteristics - can use 1n4148w, 1n4448 diode instead
1N4148 diode, characteristics - can use 1n4148w, 1n4448 diode instead
The 1N4148 diode is a common fast-switching diode used in a variety of electronic devices.
Picture 01
Basic parameters of 1N4148 diode:
Maximum reverse voltage: 100V
Maximum forward current: 200mA
Peak Forward Current: 450mA
Forward Voltage (at 1.0mA): 1V
Reverse current (at 75V): 5nA
Maximum working temperature: 150°C
Maximum storage temperature: 175°C
Switching time: 4ns
1N4148 diodes are common in applic
Model BC547/2N2222/2N4401 can replace 2N3904 transistor
Model BC547/2N2222/2N4401 can replace 2N3904 transistor
2N3904 is a commonly used NPN bipolar transistor
(2N3904 transistor), which is widely used in electronics due to its wide range of properties. The following are the specific model specifications of each manufacturer of the 2N3904 series: 2N3904, 2N3904 PBFREE, 2N3904,116, 2N3904,412, 2N3904-AP, 2N3904-BP,, 2N3904BU, 2N3904CBU, 2N3904G, 2N3904NLBU, 2N3904RL 1.. etc.
Infineon launches new smart power module IM323-L6G
Infineon launches new smart power module IM323-L6G
Infineon Technologies has launched the new CIPOS Tiny IM323-L6G 600 V 15 A product, further expanding its product lineup of the CIPOS Tiny Intelligent Power Module (IPM) series. The new IPM features TRENCHSTOP RC-D2 IGBT power switching devices and advanced SOI gate drive technology to maximize efficiency and achieve higher reliability while minimizing form factor and system cost. The all-in-one package of discrete power semiconductors and dr