ON Semiconductor FNA51060T3
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- FNA51060T3
- ON Semiconductor
- MODULE SPM 600V 10A SPM55
- Power Driver Modules
- FNA51060T3 Лист данных
- 20-PowerDIP Module (1.220\", 31.00mm)
- Tube
-
Lead free / RoHS Compliant - 1077
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number FNA51060T3 |
| Category Power Driver Modules |
| Manufacturer ON Semiconductor |
| Description MODULE SPM 600V 10A SPM55 |
| Package Tube |
| Series Motion SPM® 55 |
| Type IGBT |
| Mounting Type Through Hole |
| Package / Case 20-PowerDIP Module (1.220\", 31.00mm) |
| Configuration 3 Phase Inverter |
| Current 10 A |
| Voltage 600 V |
| Voltage - Isolation 1500Vrms |
| Package_case 20-PowerDIP Module (1.220\", 31.00mm) |
FNA51060T3 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о FNA51060T3 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
FNA51060T3 сопутствующие товары
Комментарии
ON Semiconductor
FNA41060
MOD SPM 600V 10A SPM26-AA
FNB51060TD1
MOD SPM 600V 10A SPM26-AA
FNB51560TD1
MOD SPM 600V 10A SPM26-AA
FNB81060T3
MOD SPM 600V 10A SPM26-AA
FNF51060TD1
MOD SPM 600V 10A SPM26-AA
FNF50560TD1
MOD SPM 600V 10A SPM26-AA
FNB50560T1
MOD SPM 600V 10A SPM26-AA
FNB50560TD1
MOD SPM 600V 10A SPM26-AA
An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications
An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications
IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the advantages of MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and BJT (Bipolar Transistor). It is widely used in the field of power electronics and used in switching power supplies. , motor drive, inverter and other applications.
IGBT module CM1000DU-34NF The IGBT module is a highly efficient and comp
NPN Silicon Transistor S8050 - Datasheet, Application Specifications, Pinout and Equivalent Replacements
NPN Silicon Transistor S8050 - Datasheet, Application Specifications, Pinout and Equivalent Replacements
S8050 is an NPN bipolar transistor. So when the base pin is connected to ground, the collector and emitter will remain open (reverse biased) and when a signal is supplied to the base pin, the collector and emitter will be closed (forward biased). It is commonly used in amplification and switching applications and is the perfect transistor to perform small and versatile tasks in electronic
Model BC547/2N2222/2N4401 can replace 2N3904 transistor
Model BC547/2N2222/2N4401 can replace 2N3904 transistor
2N3904 is a commonly used NPN bipolar transistor
(2N3904 transistor), which is widely used in electronics due to its wide range of properties. The following are the specific model specifications of each manufacturer of the 2N3904 series: 2N3904, 2N3904 PBFREE, 2N3904,116, 2N3904,412, 2N3904-AP, 2N3904-BP,, 2N3904BU, 2N3904CBU, 2N3904G, 2N3904NLBU, 2N3904RL 1.. etc.
NCD57085 and NCV57085 onsemi
NCD57085 and NCV57085 onsemi
ON Semiconductor NCD57085/NCV57085 isolated IGBT gate driver provides 2.5kVrms internal current isolation and current detection protection, with soft shutdown and fault reporting functions. NCD57085/NCV57085 are designed to achieve high system efficiency and reliability in high-power applications. These devices have a wide input bias voltage range and signal level of 3.3V-20.0V, and a wide output bias voltage range of up to 30V. The safety features of NCD57085/NCV57
