FJ4B01110L1

Panasonic Electronic Components FJ4B01110L1

Изображение только для справки, пожалуйста, обратитесь к спецификации продукта

  • FJ4B01110L1
  • Panasonic Electronic Components
  • MOSFET P-CH 12V 1.4A ALGA004
  • Transistors - FETs, MOSFETs - Single
  • FJ4B01110L1 Лист данных
  • 4-XFLGA, CSP
  • Cut Tape (CT)
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/FJ4B01110L1Lead free / RoHS Compliant
  • 16760
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
FJ4B01110L1
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Panasonic Electronic Components
Description
MOSFET P-CH 12V 1.4A ALGA004
Package
Cut Tape (CT)
Series
-
Operating Temperature
-40°C ~ 85°C (TA)
Mounting Type
Surface Mount
Package / Case
4-XFLGA, CSP
Supplier Device Package
ALGA004-W-0606-RA01
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
340mW (Ta)
FET Type
P-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
12 V
Current - Continuous Drain (Id) @ 25°C
1.4A (Ta)
Rds On (Max) @ Id, Vgs
153mOhm @ 700mA, 4.5V
Vgs(th) (Max) @ Id
1V @ 598µA
Gate Charge (Qg) (Max) @ Vgs
3.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds
226 pF @ 10 V
Vgs (Max)
±8V
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V
Package_case
4-XFLGA, CSP

FJ4B01110L1 Гарантии

jinfftry-guarantee1,https://www.jinftry.ru/product_detail/FJ4B01110L1

jinfftry-guarantee2,https://www.jinftry.ru/product_detail/FJ4B01110L1

jinfftry-guarantee3,https://www.jinftry.ru/product_detail/FJ4B01110L1

• Ответьте оперативно

• Гарантированное качество

• Глобальный доступ

• Конкурентоспособная рыночная цена

• Универсальные услуги цепочки поставок

Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!

У вас есть вопросы о FJ4B01110L1 ?
Не стесняйтесь связаться с нами:

+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )

Комментарии

Оставьте свой комментарий

Panasonic Electronic Components
Panasonic Electronic Components,https://www.jinftry.ru/product_detail/FJ4B01110L1
FK4B01100L1,https://www.jinftry.ru/product_detail/FJ4B01110L1
FK4B01100L1

MOSFET N-CH 12V 3.4A XLGA004

FJ4B01100L1,https://www.jinftry.ru/product_detail/FJ4B01110L1
FJ4B01100L1

MOSFET N-CH 12V 3.4A XLGA004

FJ4B01120L1,https://www.jinftry.ru/product_detail/FJ4B01110L1
FJ4B01120L1

MOSFET N-CH 12V 3.4A XLGA004

FK4B01120L1,https://www.jinftry.ru/product_detail/FJ4B01110L1
FK4B01120L1

MOSFET N-CH 12V 3.4A XLGA004

FK4B01120L1,https://www.jinftry.ru/product_detail/FJ4B01110L1
FK4B01120L1

MOSFET N-CH 12V 3.4A XLGA004

DB2G43200L1,https://www.jinftry.ru/product_detail/FJ4B01110L1
DB2G43200L1

MOSFET N-CH 12V 3.4A XLGA004

MA4L72800A,https://www.jinftry.ru/product_detail/FJ4B01110L1
MA4L72800A

MOSFET N-CH 12V 3.4A XLGA004

DB2G60800L1,https://www.jinftry.ru/product_detail/FJ4B01110L1
DB2G60800L1

MOSFET N-CH 12V 3.4A XLGA004

What is transistor?

What is transistor? What types of transistors in the market? Function and properties of a transistor Working principle of transistor Transistor vs IC amplify What’s a transistor used for? Trend of transistors

2SC5200 2SA1943 NPN transistor electronic power amplifier, data sheet, application characteristics

The 2SA1943 and 2SC5200 are complementary NPN and PNP power transistors commonly used in electronic power amplifier circuits. When used together, they are often used in high-power audio amplifiers to amplify audio signals.

What are IGBTs? How to improve the thermal performance design of IGBT on PCB

What are IGBTs? How to improve the thermal performance design of IGBT on PCB IGBT - Insulated Gate Bipolar Transistor. An IGBT is a power semiconductor device used in high voltage and high current applications. They are mainly used as switches in power electronic circuits. It's worth noting in the name IGBT, which has an insulated gate like a FET and a bipolar transistor like a BJT. The main reason for this is that an IGBT is indeed a device that combines the advantages of both transistors

Classification of IGBT modules, difference between application characteristics and MOSFETs

Classification of IGBT modules, difference between application characteristics and MOSFETs Both MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are commonly used switching devices in power electronics. They each have their own characteristics and application scenarios, the following are their main differences:
Индекс продукции
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
0
1
2
3
4
5
6
7
8
9
Shopping Cart Tel: +86-755-82518276 Email: sales@jinftry.com Skype: +8615019224070, annies65, +8615118125813 QQ: 568248857, 827259012, 316249462 Mobile: +8615019224070, +8615118118839, +8615118125813 WeChat: Send Message
TOP