FII24N17AH1

IXYS FII24N17AH1

Изображение только для справки, пожалуйста, обратитесь к спецификации продукта

  • FII24N17AH1
  • IXYS
  • IGBT H BRIDGE 1700V 18A I4PAK5
  • Transistors - IGBTs - Arrays
  • FII24N17AH1 Лист данных
  • i4-Pac™-5
  • Box
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/FII24N17AH1Lead free / RoHS Compliant
  • 21240
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
FII24N17AH1
Category
Transistors - IGBTs - Arrays
Manufacturer
IXYS
Description
IGBT H BRIDGE 1700V 18A I4PAK5
Package
Box
Series
-
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
i4-Pac™-5
Supplier Device Package
ISOPLUS i4-PAC™
Power - Max
140 W
Configuration
Half Bridge
Current - Collector (Ic) (Max)
18 A
Voltage - Collector Emitter Breakdown (Max)
1700 V
Current - Collector Cutoff (Max)
100 µA
IGBT Type
NPT
Vce(on) (Max) @ Vge, Ic
6V @ 15V, 16A
Input Capacitance (Cies) @ Vce
2.4 nF @ 25 V
Input
Standard
NTC Thermistor
No
Package_case
i4-Pac™-5

FII24N17AH1 Гарантии

jinfftry-guarantee1,https://www.jinftry.ru/product_detail/FII24N17AH1

jinfftry-guarantee2,https://www.jinftry.ru/product_detail/FII24N17AH1

jinfftry-guarantee3,https://www.jinftry.ru/product_detail/FII24N17AH1

• Ответьте оперативно

• Гарантированное качество

• Глобальный доступ

• Конкурентоспособная рыночная цена

• Универсальные услуги цепочки поставок

Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!

У вас есть вопросы о FII24N17AH1 ?
Не стесняйтесь связаться с нами:

+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )

Комментарии

Оставьте свой комментарий

IXYS
IXYS,https://www.jinftry.ru/product_detail/FII24N17AH1
IXA40PG1200DHGLB-TRR,https://www.jinftry.ru/product_detail/FII24N17AH1
IXA40PG1200DHGLB-TRR

IGBT PHASELEG 1200V 30A SMPD

IXA30PG1200DHGLB,https://www.jinftry.ru/product_detail/FII24N17AH1
IXA30PG1200DHGLB

IGBT PHASELEG 1200V 30A SMPD

IXA30PG1200DHGLB-TRR,https://www.jinftry.ru/product_detail/FII24N17AH1
IXA30PG1200DHGLB-TRR

IGBT PHASELEG 1200V 30A SMPD

IXA40RG1200DHGLB,https://www.jinftry.ru/product_detail/FII24N17AH1
IXA40RG1200DHGLB

IGBT PHASELEG 1200V 30A SMPD

IXA20PG1200DHGLB,https://www.jinftry.ru/product_detail/FII24N17AH1
IXA20PG1200DHGLB

IGBT PHASELEG 1200V 30A SMPD

IXA40RG1200DHGLB-TRR,https://www.jinftry.ru/product_detail/FII24N17AH1
IXA40RG1200DHGLB-TRR

IGBT PHASELEG 1200V 30A SMPD

IXA20PG1200DHGLB-TRR,https://www.jinftry.ru/product_detail/FII24N17AH1
IXA20PG1200DHGLB-TRR

IGBT PHASELEG 1200V 30A SMPD

FII30-06D,https://www.jinftry.ru/product_detail/FII24N17AH1
FII30-06D

IGBT PHASELEG 1200V 30A SMPD

What is a power module

What is a power module Features of the power module Power drive module role What are the power drive modules ,Provide you with power drive modules,A Power Module is a highly integrated electronic device that controls and converts electrical energy. It usually includes multiple power semiconductor devices (such as IGBTs, MOSFETs, diodes, etc.),

Introduction to Semiconductor Discrete Devices

Introduction to Semiconductor Discrete Devices Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices. Introduction to Semiconductor Discrete Devices Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe

What is a bipolar transistor and what is its operating mode

What is a bipolar transistor How bipolar transistors work Bipolar junction transistor four modes of operation Bipolar transistor development applications What is a bipolar transistor

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems. Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
Индекс продукции
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
0
1
2
3
4
5
6
7
8
9
Shopping Cart Tel: +86-755-82518276 Email: sales@jinftry.com Skype: +8615019224070, annies65, +8615118125813 QQ: 568248857, 827259012, 316249462 Mobile: +8615019224070, +8615118118839, +8615118125813 WeChat: Send Message
TOP