FF400R12KT3HOSA1

Infineon Technologies FF400R12KT3HOSA1

Изображение только для справки, пожалуйста, обратитесь к спецификации продукта

  • FF400R12KT3HOSA1
  • Infineon Technologies
  • IGBT MOD 1200V 580A 2000W
  • Transistors - IGBTs - Modules
  • FF400R12KT3HOSA1 Лист данных
  • Module
  • Bulk
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/FF400R12KT3HOSA1Lead free / RoHS Compliant
  • 2567
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
FF400R12KT3HOSA1
Category
Transistors - IGBTs - Modules
Manufacturer
Infineon Technologies
Description
IGBT MOD 1200V 580A 2000W
Package
Bulk
Series
-
Operating Temperature
-40°C ~ 125°C
Mounting Type
Chassis Mount
Package / Case
Module
Supplier Device Package
Module
Power - Max
2000 W
Configuration
2 Independent
Current - Collector (Ic) (Max)
580 A
Voltage - Collector Emitter Breakdown (Max)
1200 V
Current - Collector Cutoff (Max)
5 mA
IGBT Type
Trench Field Stop
Vce(on) (Max) @ Vge, Ic
2.15V @ 15V, 400A
Input Capacitance (Cies) @ Vce
28 nF @ 25 V
Input
Standard
NTC Thermistor
No
Package_case
Module

FF400R12KT3HOSA1 Гарантии

jinfftry-guarantee1,https://www.jinftry.ru/product_detail/FF400R12KT3HOSA1

jinfftry-guarantee2,https://www.jinftry.ru/product_detail/FF400R12KT3HOSA1

jinfftry-guarantee3,https://www.jinftry.ru/product_detail/FF400R12KT3HOSA1

• Ответьте оперативно

• Гарантированное качество

• Глобальный доступ

• Конкурентоспособная рыночная цена

• Универсальные услуги цепочки поставок

Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!

У вас есть вопросы о FF400R12KT3HOSA1 ?
Не стесняйтесь связаться с нами:

+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )

Комментарии

Оставьте свой комментарий

Infineon Technologies
Infineon Technologies,https://www.jinftry.ru/product_detail/FF400R12KT3HOSA1
FF450R12ME7B11BPSA1,https://www.jinftry.ru/product_detail/FF400R12KT3HOSA1
FF450R12ME7B11BPSA1

ECONODUAL 3 WITH TRENCHSTOP IGBT

FP100R12KT4B11BOSA1,https://www.jinftry.ru/product_detail/FF400R12KT3HOSA1
FP100R12KT4B11BOSA1

ECONODUAL 3 WITH TRENCHSTOP IGBT

FS150R12PT4BOSA1,https://www.jinftry.ru/product_detail/FF400R12KT3HOSA1
FS150R12PT4BOSA1

ECONODUAL 3 WITH TRENCHSTOP IGBT

FS3L200R10W3S7FB11BPSA1,https://www.jinftry.ru/product_detail/FF400R12KT3HOSA1
FS3L200R10W3S7FB11BPSA1

ECONODUAL 3 WITH TRENCHSTOP IGBT

FS150R12KT4B11BOSA1,https://www.jinftry.ru/product_detail/FF400R12KT3HOSA1
FS150R12KT4B11BOSA1

ECONODUAL 3 WITH TRENCHSTOP IGBT

FF600R12KT4HOSA1,https://www.jinftry.ru/product_detail/FF400R12KT3HOSA1
FF600R12KT4HOSA1

ECONODUAL 3 WITH TRENCHSTOP IGBT

2ED300C17STROHSBPSA1,https://www.jinftry.ru/product_detail/FF400R12KT3HOSA1
2ED300C17STROHSBPSA1

ECONODUAL 3 WITH TRENCHSTOP IGBT

F3L300R07PE4BOSA1,https://www.jinftry.ru/product_detail/FF400R12KT3HOSA1
F3L300R07PE4BOSA1

ECONODUAL 3 WITH TRENCHSTOP IGBT

Datasheet and working principle of 1N4001 rectifier diode

Friends who are familiar with diodes should know that 1N4001 is a common rectifier diode used to convert alternating current into direct current. This type of diode has a wide range of applications in electronic equipment and circuits.

1N5408 Power/Rectifier Diode Introduction - Pinout, Price, Datasheet

1N5408 Power/Rectifier Diode Introduction - Pinout, Price, Datasheet An introduction to the 1N5408 power/rectifier diode is discussed here. 1N5408 is a very common rectifier diode that is widely used in electronic equipment. This is a general purpose silicon diode, the 1N5408 low frequency power diode, used in various rectification and power conversion applications.

Infineon launches new smart power module IM323-L6G

Infineon launches new smart power module IM323-L6G Infineon Technologies has launched the new CIPOS Tiny IM323-L6G 600 V 15 A product, further expanding its product lineup of the CIPOS Tiny Intelligent Power Module (IPM) series. The new IPM features TRENCHSTOP RC-D2 IGBT power switching devices and advanced SOI gate drive technology to maximize efficiency and achieve higher reliability while minimizing form factor and system cost. The all-in-one package of discrete power semiconductors and dr

Infineon High Power Density SiC MOSFET

Infineon High Power Density SiC MOSFETs New materials are an important means for manufacturers to improve the power density of devices. We have used GaN as an example in the technical innovation part. You can use Infineon's IGO60R070D1AUMA1 to gain an in-depth understanding of this and feel the high power density performance of the product. The manufacturer of this device is on https://www.jinftry.com/ The part number is also IGO60R070D1AUMA1. Next, we will introduce another device from Infi
Индекс продукции
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
0
1
2
3
4
5
6
7
8
9
Shopping Cart Tel: +86-755-82518276 Email: sales@jinftry.com Skype: +8615019224070, annies65, +8615118125813 QQ: 568248857, 827259012, 316249462 Mobile: +8615019224070, +8615118118839, +8615118125813 WeChat: Send Message
TOP