Infineon Technologies FF300R17KE4PHOSA1
- FF300R17KE4PHOSA1
- Infineon Technologies
- IGBT MODULE 1700V 600A
- Transistors - IGBTs - Modules
- FF300R17KE4PHOSA1 Лист данных
- Module
- Bulk
- Lead free / RoHS Compliant
- 9103
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number FF300R17KE4PHOSA1 |
Category Transistors - IGBTs - Modules |
Manufacturer Infineon Technologies |
Description IGBT MODULE 1700V 600A |
Package Bulk |
Series - |
Operating Temperature -40°C ~ 150°C |
Mounting Type Chassis Mount |
Package / Case Module |
Supplier Device Package Module |
Power - Max - |
Configuration Half Bridge |
Current - Collector (Ic) (Max) 600 A |
Voltage - Collector Emitter Breakdown (Max) 1700 V |
Current - Collector Cutoff (Max) 1 mA |
IGBT Type Trench Field Stop |
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 300A |
Input Capacitance (Cies) @ Vce 24.5 nF @ 25 V |
Input Standard |
NTC Thermistor No |
Package_case Module |
FF300R17KE4PHOSA1 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о FF300R17KE4PHOSA1 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
Infineon Technologies
FD600R06ME3S2BOSA1
IGBT MOD 600V 600A 2250W
BSM300GA120DN2HOSA1
IGBT MOD 600V 600A 2250W
FS100R17N3E4B11BOSA1
IGBT MOD 600V 600A 2250W
F3L11MR12W2M1B65BOMA1
IGBT MOD 600V 600A 2250W
FS200R07N3E4RB11BOSA1
IGBT MOD 600V 600A 2250W
FF300R17ME4PB11BPSA1
IGBT MOD 600V 600A 2250W
F4100R12KS4BOSA1
IGBT MOD 600V 600A 2250W
FS100R17KE3BOSA1
IGBT MOD 600V 600A 2250W
What is transistor?
What is transistor?
What types of transistors in the market?
Function and properties of a transistor
Working principle of transistor
Transistor vs IC amplify
What’s a transistor used for?
Trend of transistors
Introduction to Semiconductor Discrete Devices
Introduction to Semiconductor Discrete Devices
Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices.
Introduction to Semiconductor Discrete Devices
Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe
The development trend of IGBT (insulated gate bipolar transistor) manufacturers in recent years
PS22A78-E
Description:DIPIPMs are intelligent power modules that integrate power devices, drivers, and protection circuitry. Design time is reduced by the use of application-specific HVICs and value-added features such as linear temperature feed-back. Overall efficiency and reliability are increase ed by the use of full gate CSTBT technology and low thermal impedance. Features:
Low-loss, Full Gate CSTBT IGBTs Single Power Supply
Integrated HVICs
Direct Connection to CPUApplications:
Infineon's security chips are the first to receive CLS-Ready certification from the Singapore Cyber Security Agency
Infineon's security chips are the first to receive CLS-Ready certification from the Singapore Cyber Security Agency
Infineon Technologies AG's OPTIGA™ Trust M security chip has become the first security platform to be CLS-Ready certified by the Cyber Security Agency of Singapore (CSA). As the number of IoT devices increases, so does the number of cyber-attack incidents. But the security issues of Internet of Things (IoT) and Internet of Things (IoTT) devices are often overlooked, and pe