Fairchild Semiconductor FDS86540
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- FDS86540
- Fairchild Semiconductor
- SMALL SIGNAL FIELD-EFFECT TRANSI
- Transistors - FETs, MOSFETs - Single
- FDS86540 Лист данных
- 8-SOIC (0.154\", 3.90mm Width)
- Bulk
-
Lead free / RoHS Compliant - 3965
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number FDS86540 |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Fairchild Semiconductor |
| Description SMALL SIGNAL FIELD-EFFECT TRANSI |
| Package Bulk |
| Series PowerTrench® |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case 8-SOIC (0.154\", 3.90mm Width) |
| Supplier Device Package 8-SOIC |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 2.5W (Ta), 5W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 60 V |
| Current - Continuous Drain (Id) @ 25°C 18A (Ta) |
| Rds On (Max) @ Id, Vgs 4.5mOhm @ 18A, 10V |
| Vgs(th) (Max) @ Id 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs 90 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 6410 pF @ 30 V |
| Vgs (Max) ±20V |
| Drive Voltage (Max Rds On, Min Rds On) 8V, 10V |
| Package_case 8-SOIC (0.154\", 3.90mm Width) |
FDS86540 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о FDS86540 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
FDS86540 сопутствующие товары
Комментарии
Fairchild Semiconductor
FDMC7660DC
POWER FIELD-EFFECT TRANSISTOR, 3
FDD3680
POWER FIELD-EFFECT TRANSISTOR, 3
HUF76633P3_F085
POWER FIELD-EFFECT TRANSISTOR, 3
FCD7N60TM_WS
POWER FIELD-EFFECT TRANSISTOR, 3
FDMC8588DC
POWER FIELD-EFFECT TRANSISTOR, 3
FQPF9P25YDTU
POWER FIELD-EFFECT TRANSISTOR, 3
FDS2572
POWER FIELD-EFFECT TRANSISTOR, 3
FDB070AN06A0_F085
POWER FIELD-EFFECT TRANSISTOR, 3
What is a power module
What is a power module Features of the power module Power drive module role What are the power drive modules ，Provide you with power drive modules,A Power Module is a highly integrated electronic device that controls and converts electrical energy. It usually includes multiple power semiconductor devices (such as IGBTs, MOSFETs, diodes, etc.),
Introduction to Semiconductor Discrete Devices
Introduction to Semiconductor Discrete Devices
Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices.
Introduction to Semiconductor Discrete Devices
Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe
What is a bipolar transistor and what is its operating mode
What is a bipolar transistor
How bipolar transistors work
Bipolar junction transistor four modes of operation
Bipolar transistor development applications
What is a bipolar transistor
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
