ON Semiconductor FDP4D5N10C
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- FDP4D5N10C
- ON Semiconductor
- MOSFET N-CH 100V 128A TO220-3
- Transistors - FETs, MOSFETs - Single
- FDP4D5N10C Лист данных
- TO-220-3
- Tube
-
Lead free / RoHS Compliant - 26521
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
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| Part Number FDP4D5N10C |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer ON Semiconductor |
| Description MOSFET N-CH 100V 128A TO220-3 |
| Package Tube |
| Series PowerTrench® |
| Operating Temperature -55°C ~ 175°C (TJ) |
| Mounting Type Through Hole |
| Package / Case TO-220-3 |
| Supplier Device Package TO-220-3 |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 2.4W (Ta), 150W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 100 V |
| Current - Continuous Drain (Id) @ 25°C 128A (Tc) |
| Rds On (Max) @ Id, Vgs 4.5mOhm @ 100A, 10V |
| Vgs(th) (Max) @ Id 4V @ 310µA |
| Gate Charge (Qg) (Max) @ Vgs 68 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 5065 pF @ 50 V |
| Vgs (Max) ±20V |
| Drive Voltage (Max Rds On, Min Rds On) 10V |
| Package_case TO-220-3 |
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