ON Semiconductor FDP33N25
- FDP33N25
- ON Semiconductor
- MOSFET N-CH 250V 33A TO220-3
- Transistors - FETs, MOSFETs - Single
- FDP33N25 Лист данных
- TO-220-3
- Cut Tape (CT)
- Lead free / RoHS Compliant
- 8179
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number FDP33N25 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer ON Semiconductor |
Description MOSFET N-CH 250V 33A TO220-3 |
Package Cut Tape (CT) |
Series UniFET™ |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Through Hole |
Package / Case TO-220-3 |
Supplier Device Package TO-220-3 |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 235W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 250 V |
Current - Continuous Drain (Id) @ 25°C 33A (Tc) |
Rds On (Max) @ Id, Vgs 94mOhm @ 16.5A, 10V |
Vgs(th) (Max) @ Id 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 48 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 2135 pF @ 25 V |
Vgs (Max) ±30V |
Drive Voltage (Max Rds On, Min Rds On) 10V |
Package_case TO-220-3 |
FDP33N25 Гарантии
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• Гарантированное качество
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