ON Semiconductor FDP070AN06A0
- FDP070AN06A0
- ON Semiconductor
- MOSFET N-CH 60V 15A/80A TO220-3
- Transistors - FETs, MOSFETs - Single
- FDP070AN06A0 Лист данных
- TO-220-3
- Tube
- Lead free / RoHS Compliant
- 1096
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number FDP070AN06A0 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer ON Semiconductor |
Description MOSFET N-CH 60V 15A/80A TO220-3 |
Package Tube |
Series PowerTrench® |
Operating Temperature -55°C ~ 175°C (TJ) |
Mounting Type Through Hole |
Package / Case TO-220-3 |
Supplier Device Package TO-220-3 |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 175W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 60 V |
Current - Continuous Drain (Id) @ 25°C 15A (Ta), 80A (Tc) |
Rds On (Max) @ Id, Vgs 7mOhm @ 80A, 10V |
Vgs(th) (Max) @ Id 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 66 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 3000 pF @ 25 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 10V |
Package_case TO-220-3 |
FDP070AN06A0 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о FDP070AN06A0 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
ON Semiconductor
FDMS015N04B
MOSFET N-CH 40V 31.3A/100A 8PQFN
FCP380N60E
MOSFET N-CH 40V 31.3A/100A 8PQFN
NTMFS5C442NT1G
MOSFET N-CH 40V 31.3A/100A 8PQFN
FDMC86261P
MOSFET N-CH 40V 31.3A/100A 8PQFN
FDMC86184
MOSFET N-CH 40V 31.3A/100A 8PQFN
FDP120N10
MOSFET N-CH 40V 31.3A/100A 8PQFN
FDD6760A
MOSFET N-CH 40V 31.3A/100A 8PQFN
FCD380N60E
MOSFET N-CH 40V 31.3A/100A 8PQFN
Introduction to Semiconductor Discrete Devices
Introduction to Semiconductor Discrete Devices
Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices.
Introduction to Semiconductor Discrete Devices
Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe
An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications
An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications
IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the advantages of MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and BJT (Bipolar Transistor). It is widely used in the field of power electronics and used in switching power supplies. , motor drive, inverter and other applications.
IGBT module CM1000DU-34NF The IGBT module is a highly efficient and comp
2SC5200 2SA1943 NPN transistor electronic power amplifier, data sheet, application characteristics
The 2SA1943 and 2SC5200 are complementary NPN and PNP power transistors commonly used in electronic power amplifier circuits. When used together, they are often used in high-power audio amplifiers to amplify audio signals.
Analysis of current semiconductor electronic components application field, supply and demand situation and development trend
Analysis of current semiconductor electronic components application field, supply and demand situation and development trend
With the rapid development of technology, electronic components have become an indispensable part of our daily life. From smartphones to home appliances, from cars to satellites, they all rely on the support of electronic components. So, what are the current development trends in the application fields of electronic components?
Trend towards smaller, lighter and thin