ON Semiconductor FDN359AN
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- FDN359AN
- ON Semiconductor
- MOSFET N-CH 30V 2.7A SUPERSOT3
- Transistors - FETs, MOSFETs - Single
- FDN359AN Лист данных
- TO-236-3, SC-59, SOT-23-3
- Tape & Reel (TR)
-
Lead free / RoHS Compliant - 1574
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number FDN359AN |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer ON Semiconductor |
| Description MOSFET N-CH 30V 2.7A SUPERSOT3 |
| Package Tape & Reel (TR) |
| Series PowerTrench® |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package SOT-23-3 |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 500mW (Ta) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 30 V |
| Current - Continuous Drain (Id) @ 25°C 2.7A (Ta) |
| Rds On (Max) @ Id, Vgs 46mOhm @ 2.7A, 10V |
| Vgs(th) (Max) @ Id 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs 7 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds 480 pF @ 10 V |
| Vgs (Max) ±20V |
| Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V |
| Package_case TO-236-3, SC-59, SOT-23-3 |
FDN359AN Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о FDN359AN ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
FDN359AN сопутствующие товары
Комментарии
ON Semiconductor
NDT2955
MOSFET P-CH 60V 2.5A SOT-223-4
FQD7N30TM
MOSFET P-CH 60V 2.5A SOT-223-4
FDD120AN15A0
MOSFET P-CH 60V 2.5A SOT-223-4
FDT86256
MOSFET P-CH 60V 2.5A SOT-223-4
FDS6690AS
MOSFET P-CH 60V 2.5A SOT-223-4
FDD5N50NZTM
MOSFET P-CH 60V 2.5A SOT-223-4
FDMS7670AS
MOSFET P-CH 60V 2.5A SOT-223-4
NTD5802NT4G
MOSFET P-CH 60V 2.5A SOT-223-4
What is Logic IC?
What is Logic IC?
What are the main functions of logic IC?
Type of standard Logic ICs
What are the advantages of using logic IC?
Equipment in Which Logic ICs are used?
What are IGBTs? How to improve the thermal performance design of IGBT on PCB
What are IGBTs? How to improve the thermal performance design of IGBT on PCB
IGBT - Insulated Gate Bipolar Transistor. An IGBT is a power semiconductor device used in high voltage and high current applications. They are mainly used as switches in power electronic circuits. It's worth noting in the name IGBT, which has an insulated gate like a FET and a bipolar transistor like a BJT. The main reason for this is that an IGBT is indeed a device that combines the advantages of both transistors
Classification of IGBT modules, difference between application characteristics and MOSFETs
Classification of IGBT modules, difference between application characteristics and MOSFETs
Both MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are commonly used switching devices in power electronics. They each have their own characteristics and application scenarios, the following are their main differences:
ON Semiconductor NCN5140S launches a complete KNX and Power over Ethernet (PoE) system solution
ON Semiconductor NCN5140S launches a complete KNX and Power over Ethernet (PoE) system solution
Leading the way in intelligent power and intelligent sensing technology, ON Semiconductor has launched two complete system solutions that support the most widely used building automation network protocols - Power over Ethernet and KNX.
The NCN5140S simplifies the development of access control and control panels and is the industry's first KNX Association-certified system-in-package. The NCN514
