FDMC0208

Fairchild Semiconductor FDMC0208

Изображение только для справки, пожалуйста, обратитесь к спецификации продукта

  • FDMC0208
  • Fairchild Semiconductor
  • N-CHANNEL POWER TRENCH MOSFET
  • Transistors - FETs, MOSFETs - Arrays
  • FDMC0208 Лист данных
  • -
  • Jinftry-Reel®
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/FDMC0208Lead free / RoHS Compliant
  • 4445
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
FDMC0208
Category
Transistors - FETs, MOSFETs - Arrays
Manufacturer
Fairchild Semiconductor
Description
N-CHANNEL POWER TRENCH MOSFET
Package
Jinftry-Reel®
Series
-
Operating Temperature
-
Mounting Type
-
Package / Case
-
Supplier Device Package
-
Power - Max
-
FET Type
-
FET Feature
-
Drain to Source Voltage (Vdss)
-
Current - Continuous Drain (Id) @ 25°C
-
Rds On (Max) @ Id, Vgs
-
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) (Max) @ Vgs
-
Input Capacitance (Ciss) (Max) @ Vds
-
Package_case
-

FDMC0208 Гарантии

jinfftry-guarantee1,https://www.jinftry.ru/product_detail/FDMC0208

jinfftry-guarantee2,https://www.jinftry.ru/product_detail/FDMC0208

jinfftry-guarantee3,https://www.jinftry.ru/product_detail/FDMC0208

• Ответьте оперативно

• Гарантированное качество

• Глобальный доступ

• Конкурентоспособная рыночная цена

• Универсальные услуги цепочки поставок

Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!

У вас есть вопросы о FDMC0208 ?
Не стесняйтесь связаться с нами:

+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )

Комментарии

Оставьте свой комментарий

Fairchild Semiconductor
Fairchild Semiconductor,https://www.jinftry.ru/product_detail/FDMC0208
IRF630BTSTU,https://www.jinftry.ru/product_detail/FDMC0208
IRF630BTSTU

IRF630B - 200V N-CHANNEL MOSFET

RFD14LN05SM,https://www.jinftry.ru/product_detail/FDMC0208
RFD14LN05SM

IRF630B - 200V N-CHANNEL MOSFET

RFD3055LE_R4821,https://www.jinftry.ru/product_detail/FDMC0208
RFD3055LE_R4821

IRF630B - 200V N-CHANNEL MOSFET

FDML7610AS,https://www.jinftry.ru/product_detail/FDMC0208
FDML7610AS

IRF630B - 200V N-CHANNEL MOSFET

SFS9630YDTU,https://www.jinftry.ru/product_detail/FDMC0208
SFS9630YDTU

IRF630B - 200V N-CHANNEL MOSFET

FQT1N60CTF,https://www.jinftry.ru/product_detail/FDMC0208
FQT1N60CTF

IRF630B - 200V N-CHANNEL MOSFET

FAN5009AMX,https://www.jinftry.ru/product_detail/FDMC0208
FAN5009AMX

IRF630B - 200V N-CHANNEL MOSFET

FDMS5362L,https://www.jinftry.ru/product_detail/FDMC0208
FDMS5362L

IRF630B - 200V N-CHANNEL MOSFET

What is a power module

What is a power module Features of the power module Power drive module role What are the power drive modules ,Provide you with power drive modules,A Power Module is a highly integrated electronic device that controls and converts electrical energy. It usually includes multiple power semiconductor devices (such as IGBTs, MOSFETs, diodes, etc.),

Introduction to Semiconductor Discrete Devices

Introduction to Semiconductor Discrete Devices Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices. Introduction to Semiconductor Discrete Devices Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe

What is a bipolar transistor and what is its operating mode

What is a bipolar transistor How bipolar transistors work Bipolar junction transistor four modes of operation Bipolar transistor development applications What is a bipolar transistor

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems. Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
Индекс продукции
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
0
1
2
3
4
5
6
7
8
9
Shopping Cart Tel: +86-755-82518276 Email: sales@jinftry.com Skype: +8615019224070, annies65, +8615118125813 QQ: 568248857, 827259012, 316249462 Mobile: +8615019224070, +8615118118839, +8615118125813 WeChat: Send Message
TOP