ON Semiconductor FDD4243-F085P
- FDD4243-F085P
- ON Semiconductor
- MOSFET P-CH 40V 14A TO252
- Transistors - FETs, MOSFETs - Single
- FDD4243-F085P Лист данных
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Tape & Reel (TR)
- Lead free / RoHS Compliant
- 21862
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number FDD4243-F085P |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer ON Semiconductor |
Description MOSFET P-CH 40V 14A TO252 |
Package Tape & Reel (TR) |
Series Automotive, AEC-Q101, PowerTrench® |
Operating Temperature -55°C ~ 175°C (TJ) |
Mounting Type Surface Mount |
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package TO-252AA |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 50W (Tc) |
FET Type P-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 40 V |
Current - Continuous Drain (Id) @ 25°C 14A (Tc) |
Rds On (Max) @ Id, Vgs 44mOhm @ 6.7A, 10V |
Vgs(th) (Max) @ Id 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 29 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 1550 pF @ 20 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V |
Package_case TO-252-3, DPak (2 Leads + Tab), SC-63 |
FDD4243-F085P Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о FDD4243-F085P ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
ON Semiconductor
FDD8445-F085P
MOSFET N-CH 40V 50A TO252
FDS8449-F085P
MOSFET N-CH 40V 50A TO252
FQB34P10TM-F085P
MOSFET N-CH 40V 50A TO252
NVMFS5A140PLZWFT3G
MOSFET N-CH 40V 50A TO252
NVD4806NT4G
MOSFET N-CH 40V 50A TO252
NVD5490NLT4G
MOSFET N-CH 40V 50A TO252
NVD5890NLT4G
MOSFET N-CH 40V 50A TO252
NVD6820NLT4G
MOSFET N-CH 40V 50A TO252
battery charger
Battery charger according to the design circuit operating frequency to divide, can be divided into power frequency machine and high frequency machine. The power frequency machine is designed based on the traditional analog circuit principle, the internal power devices (such as transformers, inductors, capacitors, etc.) are larger, and there is generally less noise when the load is larger, but the model has strong resistance performance in the harsh grid environmental conditions, and the reliabil
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
BC547/BC548 transistor pin configuration, data sheet and application characteristics
BC547/BC548 transistor pin configuration, data sheet and application characteristics
What is a BC547 transistor?
BC547 is a common NPN bipolar transistor, so it is widely used in electronic circuits when the base pin is connected to ground, the collector and emitter will remain open circuit (reverse biased), while when the base pin is grounded When a signal is provided, the collector and emitter are turned off (forward biased).
What are IGBTs? How to improve the thermal performance design of IGBT on PCB
What are IGBTs? How to improve the thermal performance design of IGBT on PCB
IGBT - Insulated Gate Bipolar Transistor. An IGBT is a power semiconductor device used in high voltage and high current applications. They are mainly used as switches in power electronic circuits. It's worth noting in the name IGBT, which has an insulated gate like a FET and a bipolar transistor like a BJT. The main reason for this is that an IGBT is indeed a device that combines the advantages of both transistors