FDD10AN06A0_F085

Fairchild Semiconductor FDD10AN06A0_F085

Изображение только для справки, пожалуйста, обратитесь к спецификации продукта

  • FDD10AN06A0_F085
  • Fairchild Semiconductor
  • MOSFET N-CH 60V 11A D-PAK
  • Transistors - FETs, MOSFETs - Single
  • FDD10AN06A0_F085 Лист данных
  • TO-252-3, DPak (2 Leads + Tab), SC-63
  • TO-252-3, DPak (2 Leads + Tab), SC-63
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/FDD10AN06A0-F085Lead free / RoHS Compliant
  • 1610
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
FDD10AN06A0_F085
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Fairchild Semiconductor
Description
MOSFET N-CH 60V 11A D-PAK
Package
TO-252-3, DPak (2 Leads + Tab), SC-63
Series
Automotive, AEC-Q101, PowerTrench?
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
TO-252AA
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
135W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
60V
Current - Continuous Drain (Id) @ 25°C
11A (Ta)
Rds On (Max) @ Id, Vgs
10.5 mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
37nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
1840pF @ 25V
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs (Max)
20V
Package_case
TO-252-3, DPak (2 Leads + Tab), SC-63

FDD10AN06A0_F085 Гарантии

jinfftry-guarantee1,https://www.jinftry.ru/product_detail/FDD10AN06A0-F085

jinfftry-guarantee2,https://www.jinftry.ru/product_detail/FDD10AN06A0-F085

jinfftry-guarantee3,https://www.jinftry.ru/product_detail/FDD10AN06A0-F085

• Ответьте оперативно

• Гарантированное качество

• Глобальный доступ

• Конкурентоспособная рыночная цена

• Универсальные услуги цепочки поставок

Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!

У вас есть вопросы о FDD10AN06A0_F085 ?
Не стесняйтесь связаться с нами:

+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )

Комментарии

Оставьте свой комментарий

Fairchild Semiconductor
Fairchild Semiconductor,https://www.jinftry.ru/product_detail/FDD10AN06A0-F085
FDWS86368_F085,https://www.jinftry.ru/product_detail/FDD10AN06A0-F085
FDWS86368_F085

MOSFET NCH 80V 80A POWER56

HUF76419S3ST_F085,https://www.jinftry.ru/product_detail/FDD10AN06A0-F085
HUF76419S3ST_F085

MOSFET NCH 80V 80A POWER56

FQB19N20LTM,https://www.jinftry.ru/product_detail/FDD10AN06A0-F085
FQB19N20LTM

MOSFET NCH 80V 80A POWER56

FQB5N60CTM_WS,https://www.jinftry.ru/product_detail/FDD10AN06A0-F085
FQB5N60CTM_WS

MOSFET NCH 80V 80A POWER56

FDD8444L_F085,https://www.jinftry.ru/product_detail/FDD10AN06A0-F085
FDD8444L_F085

MOSFET NCH 80V 80A POWER56

FDD9407L_F085,https://www.jinftry.ru/product_detail/FDD10AN06A0-F085
FDD9407L_F085

MOSFET NCH 80V 80A POWER56

FQB19N20TM,https://www.jinftry.ru/product_detail/FDD10AN06A0-F085
FQB19N20TM

MOSFET NCH 80V 80A POWER56

FDB8445_F085,https://www.jinftry.ru/product_detail/FDD10AN06A0-F085
FDB8445_F085

MOSFET NCH 80V 80A POWER56

What is a thyristor and what are its advantages?

What is a thyristor and what are its advantages? What is the working principle of the thyristor? How to measure the thyristors? What are the classifications of thyristors? What is the function of the thyristor? Advantages of using thyristor What are the main applications of thyristors?

Datasheet and working principle of 1N4001 rectifier diode

Friends who are familiar with diodes should know that 1N4001 is a common rectifier diode used to convert alternating current into direct current. This type of diode has a wide range of applications in electronic equipment and circuits.

What are IGBTs? How to improve the thermal performance design of IGBT on PCB

What are IGBTs? How to improve the thermal performance design of IGBT on PCB IGBT - Insulated Gate Bipolar Transistor. An IGBT is a power semiconductor device used in high voltage and high current applications. They are mainly used as switches in power electronic circuits. It's worth noting in the name IGBT, which has an insulated gate like a FET and a bipolar transistor like a BJT. The main reason for this is that an IGBT is indeed a device that combines the advantages of both transistors

The development trend of IGBT (insulated gate bipolar transistor) manufacturers in recent years

PS22A78-E Description:DIPIPMs are intelligent power modules that integrate power devices, drivers, and protection circuitry. Design time is reduced by the use of application-specific HVICs and value-added features such as linear temperature feed-back. Overall efficiency and reliability are increase ed by the use of full gate CSTBT technology and low thermal impedance. Features:   Low-loss, Full Gate CSTBT IGBTs Single Power Supply   Integrated HVICs   Direct Connection to CPUApplications:
Индекс продукции
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
0
1
2
3
4
5
6
7
8
9
Shopping Cart Tel: +86-755-82518276 Email: sales@jinftry.com Skype: +8615019224070, annies65, +8615118125813 QQ: 568248857, 827259012, 316249462 Mobile: +8615019224070, +8615118118839, +8615118125813 WeChat: Send Message
TOP