ON Semiconductor FDC2612
- FDC2612
- ON Semiconductor
- MOSFET N-CH 200V 1.1A SUPERSOT6
- Transistors - FETs, MOSFETs - Single
- FDC2612 Лист данных
- SOT-23-6 Thin, TSOT-23-6
- Cut Tape (CT)
- Lead free / RoHS Compliant
- 24914
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number FDC2612 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer ON Semiconductor |
Description MOSFET N-CH 200V 1.1A SUPERSOT6 |
Package Cut Tape (CT) |
Series PowerTrench® |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package SuperSOT™-6 |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 1.6W (Ta) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 200 V |
Current - Continuous Drain (Id) @ 25°C 1.1A (Ta) |
Rds On (Max) @ Id, Vgs 725mOhm @ 1.1A, 10V |
Vgs(th) (Max) @ Id 4.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 11 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 234 pF @ 100 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 10V |
Package_case SOT-23-6 Thin, TSOT-23-6 |
FDC2612 Гарантии
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• Гарантированное качество
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