FDB8870

ON Semiconductor FDB8870

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  • FDB8870
  • ON Semiconductor
  • MOSFET N-CH 30V 23A/160A TO263AB
  • Transistors - FETs, MOSFETs - Single
  • FDB8870 Лист данных
  • TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Cut Tape (CT)
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/FDB8870Lead free / RoHS Compliant
  • 4641
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
FDB8870
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
ON Semiconductor
Description
MOSFET N-CH 30V 23A/160A TO263AB
Package
Cut Tape (CT)
Series
PowerTrench®
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package
D²PAK (TO-263)
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
160W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
23A (Ta), 160A (Tc)
Rds On (Max) @ Id, Vgs
3.9mOhm @ 35A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
132 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
5200 pF @ 15 V
Vgs (Max)
±20V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Package_case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

FDB8870 Гарантии

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