ON Semiconductor FDB8870
- FDB8870
- ON Semiconductor
- MOSFET N-CH 30V 23A/160A TO263AB
- Transistors - FETs, MOSFETs - Single
- FDB8870 Лист данных
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Cut Tape (CT)
-
Lead free / RoHS Compliant
- 4641
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number FDB8870 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer ON Semiconductor |
Description MOSFET N-CH 30V 23A/160A TO263AB |
Package Cut Tape (CT) |
Series PowerTrench® |
Operating Temperature -55°C ~ 175°C (TJ) |
Mounting Type Surface Mount |
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package D²PAK (TO-263) |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 160W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 30 V |
Current - Continuous Drain (Id) @ 25°C 23A (Ta), 160A (Tc) |
Rds On (Max) @ Id, Vgs 3.9mOhm @ 35A, 10V |
Vgs(th) (Max) @ Id 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 132 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 5200 pF @ 15 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V |
Package_case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
FDB8870 Гарантии
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