Fairchild Semiconductor FDB52N20TM
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- FDB52N20TM
- Fairchild Semiconductor
- POWER FIELD-EFFECT TRANSISTOR, 5
- Transistors - FETs, MOSFETs - Single
- FDB52N20TM Лист данных
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Bulk
-
Lead free / RoHS Compliant - 8164
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
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| Part Number FDB52N20TM |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Fairchild Semiconductor |
| Description POWER FIELD-EFFECT TRANSISTOR, 5 |
| Package Bulk |
| Series UniFET™ |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package D²PAK (TO-263) |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 357W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 200 V |
| Current - Continuous Drain (Id) @ 25°C 52A (Tc) |
| Rds On (Max) @ Id, Vgs 49mOhm @ 26A, 10V |
| Vgs(th) (Max) @ Id 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs 63 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 2.9 pF @ 25 V |
| Vgs (Max) ±30V |
| Drive Voltage (Max Rds On, Min Rds On) 10V |
| Package_case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
FDB52N20TM Гарантии
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