ON Semiconductor FCH099N60E
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- FCH099N60E
- ON Semiconductor
- MOSFET N-CH 600V 37A TO247-3
- Transistors - FETs, MOSFETs - Single
- FCH099N60E Лист данных
- TO-247-3
- Bulk
-
Lead free / RoHS Compliant - 3012
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number FCH099N60E |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer ON Semiconductor |
| Description MOSFET N-CH 600V 37A TO247-3 |
| Package Bulk |
| Series SuperFET® II |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Through Hole |
| Package / Case TO-247-3 |
| Supplier Device Package TO-247-3 |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 357W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 600 V |
| Current - Continuous Drain (Id) @ 25°C 37A (Tc) |
| Rds On (Max) @ Id, Vgs 99mOhm @ 18.5A, 10V |
| Vgs(th) (Max) @ Id 3.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs 114 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 3465 pF @ 380 V |
| Vgs (Max) ±20V |
| Drive Voltage (Max Rds On, Min Rds On) 10V |
| Package_case TO-247-3 |
FCH099N60E Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о FCH099N60E ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
FCH099N60E сопутствующие товары
Комментарии
ON Semiconductor
FCA47N60
MOSFET N-CH 600V 47A TO3PN
FCH47N60N
MOSFET N-CH 600V 47A TO3PN
FCH47N60NF
MOSFET N-CH 600V 47A TO3PN
FQD19N10LTM
MOSFET N-CH 600V 47A TO3PN
FDS6670A
MOSFET N-CH 600V 47A TO3PN
FDD306P
MOSFET N-CH 600V 47A TO3PN
FDD770N15A
MOSFET N-CH 600V 47A TO3PN
SVD5865NLT4G
MOSFET N-CH 600V 47A TO3PN
ON Semiconductor launches seventh-generation IGBT smart power module with outstanding performance
ON Semiconductor launches seventh-generation IGBT smart power module with outstanding performance
ON Semiconductor, a leader in semiconductors for smart power and sensing technologies, recently launched the 1200V SPM31 Intelligent Power Module (IPM) using new seventh-generation insulated gate bipolar transistor (IGBT) technology. The SPM31 IPM excels in energy efficiency, size and power density compared to other leading solutions on the market, reducing overall system cost. These IPMs integrate
Operational amplifier brief description, function, type and application field
Brief description of the operational amplifier:
An operational amplifier (Operational Amplifier, referred to as Op-Amp) is a DC-coupled high-gain electronic voltage amplifier whose output voltage is usually several hundred times the input differential voltage. Operational amplifiers usually incorporate power limiters, negative feedback networks, and gain controls, which are fundamental components in modern analog electronic circuits.
The most complete introduction to IGBT modules in 2023
IGBTs are used in many applications, such as motor drives, industrial control, power transmission, renewable energy, and electric transportation, mainly because IGBTs provide a convenient and reliable power-switching solution for handling high-power and high-voltage applications.
The characteristics of 1N4007 diode and 1N4001 diode, can 1N4007 be used instead of 1N4001?
The characteristics of 1N4007 diode and 1N4001 diode, can 1N4007 be used instead of 1N4001?
"1N4007" and "1N4001" are two types of diode information, which are two common rectifier diodes.
1N4007 and 1N4001 are part of a series of standard recovery time rectifier diodes, mainly used for AC (alternating current) to DC (direct current) conversion.
