FBO16-12N

IXYS FBO16-12N

Изображение только для справки, пожалуйста, обратитесь к спецификации продукта

  • FBO16-12N
  • IXYS
  • BRIDGE RECT 1P 1.2KV 22A I4-PAC
  • Diodes - Bridge Rectifiers
  • FBO16-12N Лист данных
  • i4-Pac™-5
  • Tube
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/FBO16-12NLead free / RoHS Compliant
  • 2008
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
FBO16-12N
Category
Diodes - Bridge Rectifiers
Manufacturer
IXYS
Description
BRIDGE RECT 1P 1.2KV 22A I4-PAC
Package
Tube
Series
-
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Package / Case
i4-Pac™-5
Supplier Device Package
ISOPLUS i4-PAC™
Technology
Standard
Diode Type
Single Phase
Voltage - Peak Reverse (Max)
1.2 kV
Current - Average Rectified (Io)
22 A
Voltage - Forward (Vf) (Max) @ If
1.43 V @ 20 A
Current - Reverse Leakage @ Vr
10 µA @ 1200 V
Package_case
i4-Pac™-5

FBO16-12N Гарантии

jinfftry-guarantee1,https://www.jinftry.ru/product_detail/FBO16-12N

jinfftry-guarantee2,https://www.jinftry.ru/product_detail/FBO16-12N

jinfftry-guarantee3,https://www.jinftry.ru/product_detail/FBO16-12N

• Ответьте оперативно

• Гарантированное качество

• Глобальный доступ

• Конкурентоспособная рыночная цена

• Универсальные услуги цепочки поставок

Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!

У вас есть вопросы о FBO16-12N ?
Не стесняйтесь связаться с нами:

+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )

Комментарии

Оставьте свой комментарий

IXYS
IXYS,https://www.jinftry.ru/product_detail/FBO16-12N
VBO54-14NO7,https://www.jinftry.ru/product_detail/FBO16-12N
VBO54-14NO7

BRIDGE RECT 1P 1.4KV 54A ECOPAC1

DLA100B1200LB,https://www.jinftry.ru/product_detail/FBO16-12N
DLA100B1200LB

BRIDGE RECT 1P 1.4KV 54A ECOPAC1

VUO86-16NO7,https://www.jinftry.ru/product_detail/FBO16-12N
VUO86-16NO7

BRIDGE RECT 1P 1.4KV 54A ECOPAC1

VUO68-16NO7,https://www.jinftry.ru/product_detail/FBO16-12N
VUO68-16NO7

BRIDGE RECT 1P 1.4KV 54A ECOPAC1

VBO68-16NO7,https://www.jinftry.ru/product_detail/FBO16-12N
VBO68-16NO7

BRIDGE RECT 1P 1.4KV 54A ECOPAC1

VBO54-16NO7,https://www.jinftry.ru/product_detail/FBO16-12N
VBO54-16NO7

BRIDGE RECT 1P 1.4KV 54A ECOPAC1

VBE26-12NO7,https://www.jinftry.ru/product_detail/FBO16-12N
VBE26-12NO7

BRIDGE RECT 1P 1.4KV 54A ECOPAC1

DLA100B1200LB-TRR,https://www.jinftry.ru/product_detail/FBO16-12N
DLA100B1200LB-TRR

BRIDGE RECT 1P 1.4KV 54A ECOPAC1

NPN Silicon Transistor S8050 - Datasheet, Application Specifications, Pinout and Equivalent Replacements

NPN Silicon Transistor S8050 - Datasheet, Application Specifications, Pinout and Equivalent Replacements S8050 is an NPN bipolar transistor. So when the base pin is connected to ground, the collector and emitter will remain open (reverse biased) and when a signal is supplied to the base pin, the collector and emitter will be closed (forward biased). It is commonly used in amplification and switching applications and is the perfect transistor to perform small and versatile tasks in electronic

What are IGBTs? How to improve the thermal performance design of IGBT on PCB

What are IGBTs? How to improve the thermal performance design of IGBT on PCB IGBT - Insulated Gate Bipolar Transistor. An IGBT is a power semiconductor device used in high voltage and high current applications. They are mainly used as switches in power electronic circuits. It's worth noting in the name IGBT, which has an insulated gate like a FET and a bipolar transistor like a BJT. The main reason for this is that an IGBT is indeed a device that combines the advantages of both transistors

1n5819 Diode (Schottky Rectifier) Pinout, Alternatives, Specifications, Datasheet, Price and Applications

1N5819 Schottky Diode Description: 1N5819 is a commonly used Schottky diode. A Schottky diode is a diode with special properties, its main features are a small forward voltage drop (typically 0.2-0.3V) and a fast reverse recovery time.

ON NTD2955G series packages and features are different

NTD2955 is a P-type MOSFET (Metal Oxide Semiconductor Field Effect Transistor) produced by ON Semiconductor. NTD2955 series models may have some changes, such as NTD2955PT4G, NTD2955T4G, NTD2955T4, NTD2955G, NTD2955-1G, etc. These models basically have the same parameters, but may differ in packaging or other characteristics.
Индекс продукции
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
0
1
2
3
4
5
6
7
8
9
Shopping Cart Tel: +86-755-82518276 Email: sales@jinftry.com Skype: +8615019224070, annies65, +8615118125813 QQ: 568248857, 827259012, 316249462 Mobile: +8615019224070, +8615118118839, +8615118125813 WeChat: Send Message
TOP