ON Semiconductor ES85_84C4V7
- ES85_84C4V7
- ON Semiconductor
- DIODE ZENER 4.95V 550MW DIE
- Diodes - Zener - Single
- ES85_84C4V7 Лист данных
- Die
- Bulk
- Lead free / RoHS Compliant
- 24998
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number ES85_84C4V7 |
Category Diodes - Zener - Single |
Manufacturer ON Semiconductor |
Description DIODE ZENER 4.95V 550MW DIE |
Package Bulk |
Series - |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case Die |
Supplier Device Package Die |
Tolerance ±5% |
Power - Max 550 mW |
Voltage - Forward (Vf) (Max) @ If 900 mV @ 10 mA |
Current - Reverse Leakage @ Vr 3 µA @ 2 V |
Voltage - Zener (Nom) (Vz) 4.95 V |
Impedance (Max) (Zzt) - |
Package_case Die |
ES85_84C4V7 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о ES85_84C4V7 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
ON Semiconductor
WY85_BZX84C15
DIODE ZENER 14.8V 550MW SOT23
TS85_BZX84C12
DIODE ZENER 14.8V 550MW SOT23
RY85_MBZ5240B
DIODE ZENER 14.8V 550MW SOT23
LY85_BZ84C8V2
DIODE ZENER 14.8V 550MW SOT23
MMSZ5223BT1G
DIODE ZENER 14.8V 550MW SOT23
MMSZ11T1G
DIODE ZENER 14.8V 550MW SOT23
MMSZ8V2T1G
DIODE ZENER 14.8V 550MW SOT23
MMSZ18T1G
DIODE ZENER 14.8V 550MW SOT23
What is a bipolar transistor and what is its operating mode
NPN Silicon Transistor S8050 - Datasheet, Application Specifications, Pinout and Equivalent Replacements
NPN Silicon Transistor S8050 - Datasheet, Application Specifications, Pinout and Equivalent Replacements
S8050 is an NPN bipolar transistor. So when the base pin is connected to ground, the collector and emitter will remain open (reverse biased) and when a signal is supplied to the base pin, the collector and emitter will be closed (forward biased). It is commonly used in amplification and switching applications and is the perfect transistor to perform small and versatile tasks in electronic
Classification of IGBT modules, difference between application characteristics and MOSFETs
Classification of IGBT modules, difference between application characteristics and MOSFETs
Both MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are commonly used switching devices in power electronics. They each have their own characteristics and application scenarios, the following are their main differences:
ON Semiconductor NCN5140S launches a complete KNX and Power over Ethernet (PoE) system solution
ON Semiconductor NCN5140S launches a complete KNX and Power over Ethernet (PoE) system solution
Leading the way in intelligent power and intelligent sensing technology, ON Semiconductor has launched two complete system solutions that support the most widely used building automation network protocols - Power over Ethernet and KNX.
The NCN5140S simplifies the development of access control and control panels and is the industry's first KNX Association-certified system-in-package. The NCN514