EPC EPC8008ENGR
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- EPC8008ENGR
- EPC
- TRANS GAN 40V 2.7A BUMPED DIE
- Transistors - FETs, MOSFETs - Single
- EPC8008ENGR Лист данных
- Die
- Die
-
Lead free / RoHS Compliant - 4013
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
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| Part Number EPC8008ENGR |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer EPC |
| Description TRANS GAN 40V 2.7A BUMPED DIE |
| Package Die |
| Series eGaN? |
| Operating Temperature -40°C ~ 150°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case Die |
| Supplier Device Package Die |
| Technology GaNFET (Gallium Nitride) |
| FET Type N-Channel |
| Drain to Source Voltage (Vdss) 40V |
| Current - Continuous Drain (Id) @ 25°C 2.7A (Ta) |
| Rds On (Max) @ Id, Vgs 325 mOhm @ 500mA, 5V |
| Vgs(th) (Max) @ Id 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs 0.18nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds 25pF @ 20V |
| Drive Voltage (Max Rds On, Min Rds On) 5V |
| Vgs (Max) +6V, -5V |
| Package_case Die |
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