EPC EPC2107ENGRT
- EPC2107ENGRT
- EPC
- TRANS GAN 3N-CH 100V BUMPED DIE
- Transistors - FETs, MOSFETs - Arrays
- EPC2107ENGRT Лист данных
- 9-VFBGA
- 9-VFBGA
- Lead free / RoHS Compliant
- 20964
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number EPC2107ENGRT |
Category Transistors - FETs, MOSFETs - Arrays |
Manufacturer EPC |
Description TRANS GAN 3N-CH 100V BUMPED DIE |
Package 9-VFBGA |
Series eGaN? |
Operating Temperature -40°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case 9-VFBGA |
Supplier Device Package 9-BGA (1.35x1.35) |
FET Type 3 N-Channel (Half Bridge + Synchronous Bootstrap) |
FET Feature GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss) 100V |
Current - Continuous Drain (Id) @ 25°C 1.7A, 500mA |
Rds On (Max) @ Id, Vgs 320 mOhm @ 2A, 5V, 3.3 Ohm @ 2A, 5V |
Vgs(th) (Max) @ Id 2.5V @ 100µA, 2.5V @ 20µA |
Gate Charge (Qg) (Max) @ Vgs 0.16nC @ 5V, 0.044nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds 16pF @ 50V, 7pF @ 50V |
Package_case 9-VFBGA |
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