EPC EPC2106ENGRT
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- EPC2106ENGRT
- EPC
- GAN TRANS 2N-CH 100V BUMPED DIE
- Transistors - FETs, MOSFETs - Arrays
- EPC2106ENGRT Лист данных
- Die
- Cut Tape (CT)
-
Lead free / RoHS Compliant - 2827
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
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| Part Number EPC2106ENGRT |
| Category Transistors - FETs, MOSFETs - Arrays |
| Manufacturer EPC |
| Description GAN TRANS 2N-CH 100V BUMPED DIE |
| Package Cut Tape (CT) |
| Series eGaN® |
| Operating Temperature -40°C ~ 150°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case Die |
| Supplier Device Package Die |
| Power - Max - |
| FET Type 2 N-Channel (Half Bridge) |
| FET Feature GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) 100V |
| Current - Continuous Drain (Id) @ 25°C 1.7A |
| Rds On (Max) @ Id, Vgs 70mOhm @ 2A, 5V |
| Vgs(th) (Max) @ Id 2.5V @ 600µA |
| Gate Charge (Qg) (Max) @ Vgs 0.73nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds 75pF @ 50V |
| Package_case Die |
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