Infineon Technologies DZ3600S17K3B2NOSA1
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- DZ3600S17K3B2NOSA1
- Infineon Technologies
- DIODE MODULE GP 1700V AIHM190-1
- Diodes - Rectifiers - Arrays
- DZ3600S17K3B2NOSA1 Лист данных
- Module
- Tray
-
Lead free / RoHS Compliant - 18963
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number DZ3600S17K3B2NOSA1 |
| Category Diodes - Rectifiers - Arrays |
| Manufacturer Infineon Technologies |
| Description DIODE MODULE GP 1700V AIHM190-1 |
| Package Tray |
| Series - |
| Mounting Type Chassis Mount |
| Package / Case Module |
| Supplier Device Package A-IHM190-1 |
| Diode Type Standard |
| Voltage - Forward (Vf) (Max) @ If 2.2 V @ 3600 A |
| Current - Reverse Leakage @ Vr 3050 A @ 900 V |
| Diode Configuration 3 Independent |
| Voltage - DC Reverse (Vr) (Max) 1700 V |
| Current - Average Rectified (Io) (per Diode) - |
| Speed Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) - |
| Operating Temperature - Junction -40°C ~ 125°C |
| Package_case Module |
DZ3600S17K3B2NOSA1 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о DZ3600S17K3B2NOSA1 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
DZ3600S17K3B2NOSA1 сопутствующие товары
Комментарии
Infineon Technologies
DD600S65K3NOSA1
DIODE MODULE GP 6500V AIHV130-6
DD750S65K3NOSA1
DIODE MODULE GP 6500V AIHV130-6
DD1200S45KL3B5NOSA1
DIODE MODULE GP 6500V AIHV130-6
DD200S33K2CC1NOSA1
DIODE MODULE GP 6500V AIHV130-6
DD250S65K3C1NPSA1
DIODE MODULE GP 6500V AIHV130-6
BAT240AE6327
DIODE MODULE GP 6500V AIHV130-6
DD81S12KHPSA1
DIODE MODULE GP 6500V AIHV130-6
DD81S14KHPSA1
DIODE MODULE GP 6500V AIHV130-6
What is a power module
What is a power module Features of the power module Power drive module role What are the power drive modules ，Provide you with power drive modules,A Power Module is a highly integrated electronic device that controls and converts electrical energy. It usually includes multiple power semiconductor devices (such as IGBTs, MOSFETs, diodes, etc.),
Introduction to Semiconductor Discrete Devices
Introduction to Semiconductor Discrete Devices
Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices.
Introduction to Semiconductor Discrete Devices
Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe
What is a bipolar transistor and what is its operating mode
What is a bipolar transistor
How bipolar transistors work
Bipolar junction transistor four modes of operation
Bipolar transistor development applications
What is a bipolar transistor
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
