DSEP2X31-12A

IXYS DSEP2X31-12A

Изображение только для справки, пожалуйста, обратитесь к спецификации продукта

  • DSEP2X31-12A
  • IXYS
  • DIODE MODULE 1.2KV 30A SOT227B
  • Diodes - Rectifiers - Arrays
  • DSEP2X31-12A Лист данных
  • SOT-227-4, miniBLOC
  • Tube
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/DSEP2X31-12ALead free / RoHS Compliant
  • 11538
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
DSEP2X31-12A
Category
Diodes - Rectifiers - Arrays
Manufacturer
IXYS
Description
DIODE MODULE 1.2KV 30A SOT227B
Package
Tube
Series
HiPerFRED™
Mounting Type
Chassis Mount
Package / Case
SOT-227-4, miniBLOC
Supplier Device Package
SOT-227B
Diode Type
Standard
Voltage - Forward (Vf) (Max) @ If
2.72 V @ 30 A
Current - Reverse Leakage @ Vr
250 µA @ 1200 V
Diode Configuration
2 Independent
Voltage - DC Reverse (Vr) (Max)
1200 V
Current - Average Rectified (Io) (per Diode)
30A
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
40 ns
Operating Temperature - Junction
-
Package_case
SOT-227-4, miniBLOC

DSEP2X31-12A Гарантии

jinfftry-guarantee1,https://www.jinftry.ru/product_detail/DSEP2X31-12A

jinfftry-guarantee2,https://www.jinftry.ru/product_detail/DSEP2X31-12A

jinfftry-guarantee3,https://www.jinftry.ru/product_detail/DSEP2X31-12A

• Ответьте оперативно

• Гарантированное качество

• Глобальный доступ

• Конкурентоспособная рыночная цена

• Универсальные услуги цепочки поставок

Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!

У вас есть вопросы о DSEP2X31-12A ?
Не стесняйтесь связаться с нами:

+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )

Комментарии

Оставьте свой комментарий

IXYS
IXYS,https://www.jinftry.ru/product_detail/DSEP2X31-12A
DHG50X1200NA,https://www.jinftry.ru/product_detail/DSEP2X31-12A
DHG50X1200NA

DIODE MODULE 1.2KV 25A SOT227B

MDMA50P1200TG,https://www.jinftry.ru/product_detail/DSEP2X31-12A
MDMA50P1200TG

DIODE MODULE 1.2KV 25A SOT227B

MDD44-08N1B,https://www.jinftry.ru/product_detail/DSEP2X31-12A
MDD44-08N1B

DIODE MODULE 1.2KV 25A SOT227B

MDD26-14N1B,https://www.jinftry.ru/product_detail/DSEP2X31-12A
MDD26-14N1B

DIODE MODULE 1.2KV 25A SOT227B

DSEI 2X61-02A,https://www.jinftry.ru/product_detail/DSEP2X31-12A
DSEI 2X61-02A

DIODE MODULE 1.2KV 25A SOT227B

MDD26-08N1B,https://www.jinftry.ru/product_detail/DSEP2X31-12A
MDD26-08N1B

DIODE MODULE 1.2KV 25A SOT227B

DSEI2X61-06P,https://www.jinftry.ru/product_detail/DSEP2X31-12A
DSEI2X61-06P

DIODE MODULE 1.2KV 25A SOT227B

MDMA65P1600TG,https://www.jinftry.ru/product_detail/DSEP2X31-12A
MDMA65P1600TG

DIODE MODULE 1.2KV 25A SOT227B

What is a power module

What is a power module Features of the power module Power drive module role What are the power drive modules ,Provide you with power drive modules,A Power Module is a highly integrated electronic device that controls and converts electrical energy. It usually includes multiple power semiconductor devices (such as IGBTs, MOSFETs, diodes, etc.),

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems. Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i

Classification of IGBT modules, difference between application characteristics and MOSFETs

Classification of IGBT modules, difference between application characteristics and MOSFETs Both MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are commonly used switching devices in power electronics. They each have their own characteristics and application scenarios, the following are their main differences:

The development trend of IGBT (insulated gate bipolar transistor) manufacturers in recent years

PS22A78-E Description:DIPIPMs are intelligent power modules that integrate power devices, drivers, and protection circuitry. Design time is reduced by the use of application-specific HVICs and value-added features such as linear temperature feed-back. Overall efficiency and reliability are increase ed by the use of full gate CSTBT technology and low thermal impedance. Features:   Low-loss, Full Gate CSTBT IGBTs Single Power Supply   Integrated HVICs   Direct Connection to CPUApplications:
Индекс продукции
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
0
1
2
3
4
5
6
7
8
9
Shopping Cart Tel: +86-755-82518276 Email: sales@jinftry.com Skype: +8615019224070, annies65, +8615118125813 QQ: 568248857, 827259012, 316249462 Mobile: +8615019224070, +8615118118839, +8615118125813 WeChat: Send Message
TOP