Diodes Incorporated DMTH4005SK3-13
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- DMTH4005SK3-13
- Diodes Incorporated
- MOSFET N-CH 40V 95A TO252
- Transistors - FETs, MOSFETs - Single
- DMTH4005SK3-13 Лист данных
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Jinftry-Reel®
-
Lead free / RoHS Compliant - 1343
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number DMTH4005SK3-13 |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Diodes Incorporated |
| Description MOSFET N-CH 40V 95A TO252 |
| Package Jinftry-Reel® |
| Series - |
| Operating Temperature -55°C ~ 175°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package TO-252-3 |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 2.1W (Ta), 100W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 40 V |
| Current - Continuous Drain (Id) @ 25°C 95A (Tc) |
| Rds On (Max) @ Id, Vgs 4.5mOhm @ 50A, 10V |
| Vgs(th) (Max) @ Id 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs 49.1 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 3062 pF @ 20 V |
| Vgs (Max) ±20V |
| Drive Voltage (Max Rds On, Min Rds On) 10V |
| Package_case TO-252-3, DPak (2 Leads + Tab), SC-63 |
DMTH4005SK3-13 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о DMTH4005SK3-13 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
DMTH4005SK3-13 сопутствующие товары
Комментарии
Diodes Incorporated
DMP4015SK3Q-13
MOSFET P-CH 40V 14A/35A TO252
DI9435T
MOSFET P-CH 40V 14A/35A TO252
DI9430T
MOSFET P-CH 40V 14A/35A TO252
DMT6005LPS-13
MOSFET P-CH 40V 14A/35A TO252
DMT10H015LSS-13
MOSFET P-CH 40V 14A/35A TO252
DMTH3004LK3-13
MOSFET P-CH 40V 14A/35A TO252
DMT10H015LPS-13
MOSFET P-CH 40V 14A/35A TO252
ZXMP10A17GQTA
MOSFET P-CH 40V 14A/35A TO252
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
Power Integrity (PI) Design and Test Methodology
Power Integrity (PI) Design and Test Methodology
Power integrity (Power Integrity, referred to as PI) is a very important part of electronic system design, especially high-speed digital systems.
PI is generally concerned with ensuring that the various components in the system receive clear, clean, and constant power.
To this end, a suitable power distribution network (Power Distribution Network, PDN) needs to be designed and tested to ensure that its performance is up to standard.
Classification of IGBT modules, difference between application characteristics and MOSFETs
Classification of IGBT modules, difference between application characteristics and MOSFETs
Both MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are commonly used switching devices in power electronics. They each have their own characteristics and application scenarios, the following are their main differences:
1n5819 Diode (Schottky Rectifier) Pinout, Alternatives, Specifications, Datasheet, Price and Applications
1N5819 Schottky Diode Description:
1N5819 is a commonly used Schottky diode. A Schottky diode is a diode with special properties, its main features are a small forward voltage drop (typically 0.2-0.3V) and a fast reverse recovery time.
