Diodes Incorporated DMTH10H1M7STLWQ-13
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- DMTH10H1M7STLWQ-13
- Diodes Incorporated
- MOSFET BVDSS: 61V~100V POWERDI10
- Transistors - FETs, MOSFETs - Single
- DMTH10H1M7STLWQ-13 Лист данных
- 8-PowerSFN
- Cut Tape (CT)
-
Lead free / RoHS Compliant - 21752
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
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| Part Number DMTH10H1M7STLWQ-13 |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Diodes Incorporated |
| Description MOSFET BVDSS: 61V~100V POWERDI10 |
| Package Cut Tape (CT) |
| Series - |
| Operating Temperature -55°C ~ 175°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case 8-PowerSFN |
| Supplier Device Package POWERDI1012-8 |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 6W (Ta), 250W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 100 V |
| Current - Continuous Drain (Id) @ 25°C 250A (Tc) |
| Rds On (Max) @ Id, Vgs 2mOhm @ 30A, 10V |
| Vgs(th) (Max) @ Id 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs 147 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 9871 pF @ 50 V |
| Vgs (Max) ±20V |
| Drive Voltage (Max Rds On, Min Rds On) 10V |
| Package_case 8-PowerSFN |
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