DMT4001LPS-13

Diodes Incorporated DMT4001LPS-13

Изображение только для справки, пожалуйста, обратитесь к спецификации продукта

  • DMT4001LPS-13
  • Diodes Incorporated
  • MOSFET N-CH 40V 100A PWRDI5060-8
  • Transistors - FETs, MOSFETs - Single
  • DMT4001LPS-13 Лист данных
  • 8-PowerTDFN
  • Tape & Reel (TR)
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/DMT4001LPS-13Lead free / RoHS Compliant
  • 1354
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
DMT4001LPS-13
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Diodes Incorporated
Description
MOSFET N-CH 40V 100A PWRDI5060-8
Package
Tape & Reel (TR)
Series
-
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Supplier Device Package
PowerDI5060-8 (Type K)
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
2.6W
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
100A (Tc)
Rds On (Max) @ Id, Vgs
1mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
160.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
12121 pF @ 20 V
Vgs (Max)
±20V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Package_case
8-PowerTDFN

DMT4001LPS-13 Гарантии

jinfftry-guarantee1,https://www.jinftry.ru/product_detail/DMT4001LPS-13

jinfftry-guarantee2,https://www.jinftry.ru/product_detail/DMT4001LPS-13

jinfftry-guarantee3,https://www.jinftry.ru/product_detail/DMT4001LPS-13

• Ответьте оперативно

• Гарантированное качество

• Глобальный доступ

• Конкурентоспособная рыночная цена

• Универсальные услуги цепочки поставок

Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!

У вас есть вопросы о DMT4001LPS-13 ?
Не стесняйтесь связаться с нами:

+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )

Комментарии

Оставьте свой комментарий

Diodes Incorporated
Diodes Incorporated,https://www.jinftry.ru/product_detail/DMT4001LPS-13
DMTH10H010SCT,https://www.jinftry.ru/product_detail/DMT4001LPS-13
DMTH10H010SCT

MOSFET N-CH 100V 100A TO220AB

DMT30M9LPS-13,https://www.jinftry.ru/product_detail/DMT4001LPS-13
DMT30M9LPS-13

MOSFET N-CH 100V 100A TO220AB

DMT4003SCT,https://www.jinftry.ru/product_detail/DMT4001LPS-13
DMT4003SCT

MOSFET N-CH 100V 100A TO220AB

DMNH45M7SCT,https://www.jinftry.ru/product_detail/DMT4001LPS-13
DMNH45M7SCT

MOSFET N-CH 100V 100A TO220AB

DMJ65H650SCTI,https://www.jinftry.ru/product_detail/DMT4001LPS-13
DMJ65H650SCTI

MOSFET N-CH 100V 100A TO220AB

DMN95H2D2HCTI,https://www.jinftry.ru/product_detail/DMT4001LPS-13
DMN95H2D2HCTI

MOSFET N-CH 100V 100A TO220AB

DMTH10H005SCT,https://www.jinftry.ru/product_detail/DMT4001LPS-13
DMTH10H005SCT

MOSFET N-CH 100V 100A TO220AB

DMJ65H190SCTI,https://www.jinftry.ru/product_detail/DMT4001LPS-13
DMJ65H190SCTI

MOSFET N-CH 100V 100A TO220AB

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems. Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i

1N5408 Power/Rectifier Diode Introduction - Pinout, Price, Datasheet

1N5408 Power/Rectifier Diode Introduction - Pinout, Price, Datasheet An introduction to the 1N5408 power/rectifier diode is discussed here. 1N5408 is a very common rectifier diode that is widely used in electronic equipment. This is a general purpose silicon diode, the 1N5408 low frequency power diode, used in various rectification and power conversion applications.

What is a Junction Diode? What are the types of junction diodes?

What is a Junction Diode? A junction diode is a semiconductor device consisting of a structure composed of a P-type semiconductor and an N-type semiconductor. It is also known as a PN junction diode or simply a diode. Junction diodes are one of the most basic and common types of diodes.

Infineon Ximenkang IGBT FF400R12KT4HOSA1 module series

FF450R12KE4 with EDA/CAD model made by Infineon. FF450R12KE4 provides MODULE package, which is a part of Module, Trans IGBT Module N-CH 1200V 520A 2400000mW 7-Pin 62MM-1 Tray, IGBT Modules N-CH 1.2KV 520A. The following are the IGBT module series models: SKM100GAL128D, SKM145GAL128D, SKM200GAL128D, SKM300GAL128D, SKM400GAL128D, SKM145GAR128D SKM400GAR128D, SKM300GA12V, SKM400GA12V, SKM600GA12V, SKM150GAL12V, SKM400GAL12V, SKM50GB12T4, SKM75GB12T4, SKM100GB12T4, SKM150GB12T4, SKM200GB12T4
Индекс продукции
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
0
1
2
3
4
5
6
7
8
9
Shopping Cart Tel: +86-755-82518276 Email: sales@jinftry.com Skype: +8615019224070, annies65, +8615118125813 QQ: 568248857, 827259012, 316249462 Mobile: +8615019224070, +8615118118839, +8615118125813 WeChat: Send Message
TOP