DMT12H090LFDF4-7

Diodes Incorporated DMT12H090LFDF4-7

Изображение только для справки, пожалуйста, обратитесь к спецификации продукта

  • DMT12H090LFDF4-7
  • Diodes Incorporated
  • MOSFET N-CH 115V 3.4A 6DFN
  • Transistors - FETs, MOSFETs - Single
  • DMT12H090LFDF4-7 Лист данных
  • 6-PowerXDFN
  • Tape & Reel (TR)
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/DMT12H090LFDF4-7Lead free / RoHS Compliant
  • 25851
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
DMT12H090LFDF4-7
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Diodes Incorporated
Description
MOSFET N-CH 115V 3.4A 6DFN
Package
Tape & Reel (TR)
Series
-
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
6-PowerXDFN
Supplier Device Package
X2-DFN2020-6
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
900mW (Ta)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
115 V
Current - Continuous Drain (Id) @ 25°C
3.4A (Ta)
Rds On (Max) @ Id, Vgs
90mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id
2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
251 pF @ 50 V
Vgs (Max)
±12V
Drive Voltage (Max Rds On, Min Rds On)
3V, 10V
Package_case
6-PowerXDFN

DMT12H090LFDF4-7 Гарантии

jinfftry-guarantee1,https://www.jinftry.ru/product_detail/DMT12H090LFDF4-7

jinfftry-guarantee2,https://www.jinftry.ru/product_detail/DMT12H090LFDF4-7

jinfftry-guarantee3,https://www.jinftry.ru/product_detail/DMT12H090LFDF4-7

• Ответьте оперативно

• Гарантированное качество

• Глобальный доступ

• Конкурентоспособная рыночная цена

• Универсальные услуги цепочки поставок

Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!

У вас есть вопросы о DMT12H090LFDF4-7 ?
Не стесняйтесь связаться с нами:

+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )

Комментарии

Оставьте свой комментарий

Diodes Incorporated
Diodes Incorporated,https://www.jinftry.ru/product_detail/DMT12H090LFDF4-7
DMT12H065LFDF-7,https://www.jinftry.ru/product_detail/DMT12H090LFDF4-7
DMT12H065LFDF-7

MOSFET N-CH 115V 4.3A 6UDFN

DMP2021UTSQ-13,https://www.jinftry.ru/product_detail/DMT12H090LFDF4-7
DMP2021UTSQ-13

MOSFET N-CH 115V 4.3A 6UDFN

DMTH6010SPS-13,https://www.jinftry.ru/product_detail/DMT12H090LFDF4-7
DMTH6010SPS-13

MOSFET N-CH 115V 4.3A 6UDFN

DMT6006SPS-13,https://www.jinftry.ru/product_detail/DMT12H090LFDF4-7
DMT6006SPS-13

MOSFET N-CH 115V 4.3A 6UDFN

DMT3003LFGQ-13,https://www.jinftry.ru/product_detail/DMT12H090LFDF4-7
DMT3003LFGQ-13

MOSFET N-CH 115V 4.3A 6UDFN

DMT3003LFGQ-7,https://www.jinftry.ru/product_detail/DMT12H090LFDF4-7
DMT3003LFGQ-7

MOSFET N-CH 115V 4.3A 6UDFN

DMN4030LK3Q-13,https://www.jinftry.ru/product_detail/DMT12H090LFDF4-7
DMN4030LK3Q-13

MOSFET N-CH 115V 4.3A 6UDFN

ZXMP7A17GQTC,https://www.jinftry.ru/product_detail/DMT12H090LFDF4-7
ZXMP7A17GQTC

MOSFET N-CH 115V 4.3A 6UDFN

What is a thyristor and what are its advantages?

What is a thyristor and what are its advantages? What is the working principle of the thyristor? How to measure the thyristors? What are the classifications of thyristors? What is the function of the thyristor? Advantages of using thyristor What are the main applications of thyristors?

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems. Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i

NPN Silicon Transistor S8050 - Datasheet, Application Specifications, Pinout and Equivalent Replacements

NPN Silicon Transistor S8050 - Datasheet, Application Specifications, Pinout and Equivalent Replacements S8050 is an NPN bipolar transistor. So when the base pin is connected to ground, the collector and emitter will remain open (reverse biased) and when a signal is supplied to the base pin, the collector and emitter will be closed (forward biased). It is commonly used in amplification and switching applications and is the perfect transistor to perform small and versatile tasks in electronic

Infineon Ximenkang IGBT FF400R12KT4HOSA1 module series

FF450R12KE4 with EDA/CAD model made by Infineon. FF450R12KE4 provides MODULE package, which is a part of Module, Trans IGBT Module N-CH 1200V 520A 2400000mW 7-Pin 62MM-1 Tray, IGBT Modules N-CH 1.2KV 520A. The following are the IGBT module series models: SKM100GAL128D, SKM145GAL128D, SKM200GAL128D, SKM300GAL128D, SKM400GAL128D, SKM145GAR128D SKM400GAR128D, SKM300GA12V, SKM400GA12V, SKM600GA12V, SKM150GAL12V, SKM400GAL12V, SKM50GB12T4, SKM75GB12T4, SKM100GB12T4, SKM150GB12T4, SKM200GB12T4
Индекс продукции
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
0
1
2
3
4
5
6
7
8
9
Shopping Cart Tel: +86-755-82518276 Email: sales@jinftry.com Skype: +8615019224070, annies65, +8615118125813 QQ: 568248857, 827259012, 316249462 Mobile: +8615019224070, +8615118118839, +8615118125813 WeChat: Send Message
TOP